LM28HC256H-90/B datasheet, PDF

LM28HC256H-90/B: DescriptionEEPROM, 32KX8, 90ns, Parallel, CMOS, CQCC32; Categorystorage storage; File Size419KB，12 Pages; ManufacturerLSC/CSI; Websitehttps://lsicsi.com

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LM28HC256H-90/B Overview

EEPROM, 32KX8, 90ns, Parallel, CMOS, CQCC32

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	LSC/CSI
package instruction	QCCN, LCC32,.45X.55
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	90 ns
Other features	AUTOMATIC WRITE;PAGE WRITE;BULK ERASE
command user interface	NO
Data polling	YES
Durability	10000 Write/Erase Cycles
JESD-30 code	R-CQCC-N32
JESD-609 code	e0
memory density	262144 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	32
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	32KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QCCN
Encapsulate equivalent code	LCC32,.45X.55
Package shape	RECTANGULAR
Package form	CHIP CARRIER
page size	64 words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Maximum standby current	0.00035 A
Maximum slew rate	0.08 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
Maximum write cycle time (tWC)	3 ms

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