HER251 - HER258
PRV : 50 - 1000 Volts
Io : 2.5 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
HIGH EFFICIENT
RECTIFIER DIODES
D2A
0.161 (4.1)
0.154 (3.9)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
* Pb / RoHS Free
MECHANICAL DATA :
* Case : D2A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.645 gram
0.040 (1.02)
0.0385 (0.98)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55
°C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at I
F
= 2.5 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
HER
251
50
35
50
HER
252
100
70
100
HER
253
200
140
200
HER
254
300
210
300
HER
255
400
280
400
HER
256
600
420
600
HER
257
800
560
800
HER
258
1000
700
1000
UNIT
V
V
V
A
2.5
I
FSM
V
F
I
R
I
R(H)
Trr
100
1.1
10
50
50
50
- 65 to + 150
- 65 to + 150
75
1.7
A
V
µA
µA
ns
pf
°C
°C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
C
J
T
J
T
STG
Notes :
( 1 ) Reverse Recovery Test Conditions : I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
DC
Page 1 of 2
Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( HER251 - HER258 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
Ω
10
Ω
+ 0.5 A
D.U.T.
50 Vdc
(approx)
1
Ω
PULSE
GENERATOR
( NOTE 2 )
OSCILLOSCOPE
( NOTE 1 )
0
- 0.25 A
Trr
+
- 1.0 A
SET TIME BASE FOR 25-35 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
1 cm
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
2.5
100
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PEAK FORWARD SURGE
CURRENT, AMPERES
8.3 ms SINGLE HALF SINE WAVE
Ta = 50
°C
2.0
80
1.5
60
1.0
40
0.5
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100
125
150
175
20
0
1
2
4
6
10
20
40
60 100
AMBIENT TEMPERATURE, (
°
C)
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
10
Pulse Width = 300
µs
2% Duty Cycle
T
J
= 25
°C
10
NUMBER OF CYCLES AT 60Hz
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
100
T
J
= 100
°C
FORWARD CURRENT, AMPERES
REVERSE CURRENT,
MICROAMPERES
1.0
HER251-HER255
1.0
0.1
T
J
= 25
°C
HER256-HER258
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 24, 2005
MCU
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