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HER258

Description
HIGH EFFICIENT
CategoryDiscrete semiconductor    diode   
File Size47KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric Compare View All

HER258 Overview

HIGH EFFICIENT

HER258 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
Is SamacsysN
Other featuresHIGH RELIABILITY
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current2.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current10 µA
Maximum reverse recovery time0.075 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
HER251 - HER258
PRV : 50 - 1000 Volts
Io : 2.5 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
HIGH EFFICIENT
RECTIFIER DIODES
D2A
0.161 (4.1)
0.154 (3.9)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
* Pb / RoHS Free
MECHANICAL DATA :
* Case : D2A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.645 gram
0.040 (1.02)
0.0385 (0.98)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55
°C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at I
F
= 2.5 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
HER
251
50
35
50
HER
252
100
70
100
HER
253
200
140
200
HER
254
300
210
300
HER
255
400
280
400
HER
256
600
420
600
HER
257
800
560
800
HER
258
1000
700
1000
UNIT
V
V
V
A
2.5
I
FSM
V
F
I
R
I
R(H)
Trr
100
1.1
10
50
50
50
- 65 to + 150
- 65 to + 150
75
1.7
A
V
µA
µA
ns
pf
°C
°C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
C
J
T
J
T
STG
Notes :
( 1 ) Reverse Recovery Test Conditions : I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
DC
Page 1 of 2
Rev. 02 : March 24, 2005

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HER258 HER251 HER257 HER252 HER254 HER256 HER253 HER255 HER251_05
Description HIGH EFFICIENT HIGH EFFICIENT HIGH EFFICIENT HIGH EFFICIENT HIGH EFFICIENT HIGH EFFICIENT HIGH EFFICIENT HIGH EFFICIENT HIGH EFFICIENT
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to -
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] -
Reach Compliance Code compli compli compli compli compli compli compli compli -
Is Samacsys N N N N N N N N -
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY -
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY -
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED -
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE -
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON -
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE -
Maximum forward voltage (VF) 1.7 V 1.1 V 1.7 V 1.1 V 1.1 V 1.7 V 1.1 V 1.1 V -
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 -
Maximum non-repetitive peak forward current 100 A 100 A 100 A 100 A 100 A 100 A 100 A 100 A -
Number of components 1 1 1 1 1 1 1 1 -
Phase 1 1 1 1 1 1 1 1 -
Number of terminals 2 2 2 2 2 2 2 2 -
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C -
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -
Maximum output current 2.5 A 2.5 A 2.5 A 2.5 A 2.5 A 2.5 A 2.5 A 2.5 A -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND -
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM -
Maximum repetitive peak reverse voltage 1000 V 50 V 800 V 100 V 300 V 600 V 200 V 400 V -
Maximum reverse current 10 µA 10 µA 10 µA 10 µA 10 µA 10 µA 10 µA 10 µA -
Maximum reverse recovery time 0.075 µs 0.05 µs 0.075 µs 0.05 µs 0.05 µs 0.075 µs 0.05 µs 0.05 µs -
surface mount NO NO NO NO NO NO NO NO -
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE -
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL -
Base Number Matches 1 1 1 1 1 1 1 1 -
package instruction - - O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 - -
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