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1A3

Description
1 A, 200 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size35KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric Compare View All

1A3 Overview

1 A, 200 V, SILICON, SIGNAL DIODE

1A3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
Diode typeRECTIFIER DIODE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
1A1 ~ 1A7
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
*
*
*
*
*
High current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
SILICON RECTIFIER DIODES
R-1
0.099 (2.51)
0.095 (2.42)
1.00 (25.4)
MIN.
0.138 (3.5)
0.114 (2.9)
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.20 gram
0.024 (0.6)
0.020 (0.5)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specifie.
Single phase, half wave, 60 Hz, resistive or inductive load
For capacitive load, derate current by 20%
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 50
°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
F
= 1.0 A.
Maximum DC Reverse Current
at rated DC Blocking Voltage
Typical Junction Capacitance (1)
Typical Thermal Resistance (2)
Junction Temperature Range
Storage Temperature Range
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
SYMBOL
1A1
50
35
50
1A2
100
70
100
1A3
200
140
200
1A4
400
280
400
1.0
30
1.1
5.0
50
15
50
1A5
600
420
600
1A6
800
560
800
1A7
1000
700
1000
UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
C
J
R
θ
JA
T
J
T
STG
V
V
V
A
A
V
μA
μA
pF
°C/W
°C
°C
Ta = 25
°C
Ta = 100
°C
- 65 to + 125
- 65 to + 150
(2) Thermal Resistance from Junction to Ambient 0.375" (9.5mm) Lead Length
Page 1 of 2
Rev. 03 : March 25, 2005

1A3 Related Products

1A3 1A1 1A7 1A4 1A2 1A6 1A5
Description 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compli compli compli compli compli compli compli
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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