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MSS40,045-P55

Description
SILICON, MEDIUM BARRIER SCHOTTKY,mm WAVE BAND, MIXER DIODE, HERMETIC SEALED, CERAMIC, CASE P55, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size185KB,4 Pages
ManufacturerCobham Semiconductor Solutions
Environmental Compliance  
Download Datasheet Parametric View All

MSS40,045-P55 Overview

SILICON, MEDIUM BARRIER SCHOTTKY,mm WAVE BAND, MIXER DIODE, HERMETIC SEALED, CERAMIC, CASE P55, 2 PIN

MSS40,045-P55 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerCobham Semiconductor Solutions
package instructionO-CEMW-N2
Contacts2
Manufacturer packaging codeCASE P55
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionANODE
ConfigurationSINGLE
Maximum diode capacitance0.27 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.42 V
frequency bandMILLIMETER WAVE BAND
JESD-30 codeO-CEMW-N2
JESD-609 codee4
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current0.05 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formMICROWAVE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.1 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage3 V
surface mountYES
technologySCHOTTKY
Terminal surfaceGOLD
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Schottky barrier typeMEDIUM BARRIER
MSS40,000 Series
Medium Barrier Silicon Schottky Diodes
Description
The Aeroflex / Metelics MSS40,000 Series of Schottky diodes
are fabricated on N-Type epitaxial substrates using proprietary
processes that yield the highest FCOs in the industry. Optimum
mixer performance is obtained with LO power of 0 dBm to +6
dBm per diode.
Features
V
F
, R
D
and C
J
matching options
Chip, beam lead or packaged devices
Hi-Rel screening per MIL-PRF-19500
and MIL-PRF-38534 available
Absolute Maximum Ratings
Parameters
Reverse Voltage
Forward Current
Operation Temperature
Storage Temperature
Power Dissipation
Soldering Temperature (Packaged)
Beam Lead Pull Strength
Rated V
BR
50 mA
-65 ºC to +1 ºC
50
-65 ºC to +1 ºC
50
100 mW per junction at T
A
= 25 ºC, derate
linearly to zero at T
A
= +1 ºC
50
+ 260 ºC for 5 sec.
4 grams minimum
Rating
Chip
Electrical Specifications,
T
A
= 25 ºC
V
F
V
BR
MIN
C
J
TYP / MAX
R
S
TYP
R
D
MAX
F
CO
TYP
Model
MSS40,045-C1
5
MSS40,048-C1
5
Test
Conditions
Configuration
TYP
Outline
V
V
pF
GHz
Single Junction
Single Junction
0.42
0.40
I
F
= 1
mA
3
3
I
R
=
10
μA
0.09 / 0.1
2
0.1 / 0.1
2
5
V
R
= 0 V
F = 1 MHz
7
7
1
5
1
5
253
190
C1
5
C1
5
I
F
= 5 mA
Revision Date: 05/20/05

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