1N914/A/B
FEATURES :
• High switching speed: max. 4 ns
• Continuous reverse voltage:max. 75 V
• Repetitive peak reverse voltage:max. 100 V
• Repetitive peak forward current: max. 225 mA
• Pb / RoHS Free
HIGH SPEED SWITCHING DIODES
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
1.00 (25.4)
min.
Cathode
Mark
0.150 (3.8)
max.
MECHANICAL DATA :
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
0.020 (0.52)max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Continuous Forward Current
Maximum Power Dissipation
Maximum Repetitive Peak Forward Current
Maximum Non-repetitive Peak Forward Current at t = 1s
Maximum Junction Temperature
Storage Temperature Range
(Rating at 25
°
C ambient temperature unless otherwise specified.)
Symbol
V
RRM
V
RM
I
F
P
D
I
FRM
I
FSM
T
J
T
S
(T
J
= 25°C unless otherwise noted)
Value
100
75
75
250
225
0.5
175
-65 to + 200
Unit
V
V
mA
mW
mA
A
°C
°C
Electrical Characteristics
Parameter
Reverse Current
Symbol
I
R
1N914
1N914A
1N914B
1N914B
Test Condition
V
R
= 20 V
V
R
= 20 V , Tj = 150
°C
I
F
= 10 mA
I
F
= 20 mA
I
F
= 5 mA
I
F
= 100 mA
f = 1MHz ; V
R
= 0
I
F
= 10 mA to I
R
= 60 mA
R
L
= 100
Ω
; measured
at I
R
= 1mA
Min
-
-
-
-
0.62
-
-
-
Typ
-
-
-
-
-
-
-
-
Max
25
50
1.0
1.0
0.72
1.0
4.0
4
Unit
nA
μA
V
V
V
V
pF
ns
Forward Voltage
V
F
Diode Capacitance
Reverse Recovery Time
Cd
Trr
Page 1 of 2
Rev. 03 : March 25, 2005
RATING AND CHARACTERISTIC CURVES ( 1N914/A/B )
FIG. 1 MAXIMUM PERMISSIBLE CONTINUOUS
FORWARD CURRENT AS A FUNCTION OF
AMBIENT TEMPERATURE.
100
CONTINUOUS FORWARD CURRENT,
I
F
(mA)
Lead Length 10mm.
75
1000
FIG. 2 TYPICAL FORWARD VOLTAGE
Forward Current , I
F
(mA)
100
10
50
1
T
J
= 25
°
C
25
0.1
0
0
100
200
0.01
0
0.4
0.8
1.2
1.4
Ambient Temperature , Ta (°C)
Forward Voltage , V
F
(V)
FIG. 3 TYPICAL DIODE CAPACITANCE AS
A FUNCTION OF REVERSE VOLTAGE
1.2
10
3
FIG. 4 TYPICAL REVERESE CURRENT
VERSUS JUNCTION TEMPERATURE
1.0
V
R
= 75V
Diode Capacitance , Cd (pF)
Reverse Current , I
R
(μA)
f = 1MHz;
T
J
= 25
°
C
0
10
20
10
2
0.9
0.8
10
0.7
1
0.6
0.5
10
-1
0.4
10
-2
0
100
200
Reverse Voltage , V
R
(V)
Junction Temperature , Ta (°C)
Page 2 of 2
Rev. 03 : March 25, 2005
Embedded System
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