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1N914A

Description
0.15 A, SILICON, SIGNAL DIODE, DO-35
CategoryDiscrete semiconductor    diode   
File Size39KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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1N914A Overview

0.15 A, SILICON, SIGNAL DIODE, DO-35

1N914A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionDO-35, 2 PIN
Reach Compliance Codecompli
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-204AH
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current0.075 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.25 W
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.004 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
1N914/A/B
FEATURES :
• High switching speed: max. 4 ns
• Continuous reverse voltage:max. 75 V
• Repetitive peak reverse voltage:max. 100 V
• Repetitive peak forward current: max. 225 mA
• Pb / RoHS Free
HIGH SPEED SWITCHING DIODES
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
1.00 (25.4)
min.
Cathode
Mark
0.150 (3.8)
max.
MECHANICAL DATA :
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
0.020 (0.52)max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Continuous Forward Current
Maximum Power Dissipation
Maximum Repetitive Peak Forward Current
Maximum Non-repetitive Peak Forward Current at t = 1s
Maximum Junction Temperature
Storage Temperature Range
(Rating at 25
°
C ambient temperature unless otherwise specified.)
Symbol
V
RRM
V
RM
I
F
P
D
I
FRM
I
FSM
T
J
T
S
(T
J
= 25°C unless otherwise noted)
Value
100
75
75
250
225
0.5
175
-65 to + 200
Unit
V
V
mA
mW
mA
A
°C
°C
Electrical Characteristics
Parameter
Reverse Current
Symbol
I
R
1N914
1N914A
1N914B
1N914B
Test Condition
V
R
= 20 V
V
R
= 20 V , Tj = 150
°C
I
F
= 10 mA
I
F
= 20 mA
I
F
= 5 mA
I
F
= 100 mA
f = 1MHz ; V
R
= 0
I
F
= 10 mA to I
R
= 60 mA
R
L
= 100
Ω
; measured
at I
R
= 1mA
Min
-
-
-
-
0.62
-
-
-
Typ
-
-
-
-
-
-
-
-
Max
25
50
1.0
1.0
0.72
1.0
4.0
4
Unit
nA
μA
V
V
V
V
pF
ns
Forward Voltage
V
F
Diode Capacitance
Reverse Recovery Time
Cd
Trr
Page 1 of 2
Rev. 03 : March 25, 2005

1N914A Related Products

1N914A 1N914 1N914B
Description 0.15 A, SILICON, SIGNAL DIODE, DO-35 0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-35 0.2 A, 75 V, SILICON, SIGNAL DIODE, DO-35
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
package instruction DO-35, 2 PIN O-LALF-W2 DO-35, 2 PIN
Reach Compliance Code compli compli compli
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code DO-204AH DO-204AH DO-204AH
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2
Number of components 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C
Maximum output current 0.075 A 0.075 A 0.075 A
Package body material GLASS GLASS GLASS
Package shape ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.25 W 0.25 W 0.25 W
Maximum repetitive peak reverse voltage 100 V 100 V 100 V
Maximum reverse recovery time 0.004 µs 0.004 µs 0.004 µs
surface mount NO NO NO
Terminal form WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maker - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]

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