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BY133G

Description
1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL
CategoryDiscrete semiconductor    diode   
File Size39KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric Compare View All

BY133G Overview

1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL

BY133G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
Other featuresHIGH RELIABILITY
Minimum breakdown voltage1300 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current30 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage1300 V
Maximum reverse current5 µA
Reverse test voltage1300 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
1N4001G - 1N4007G
BY133G
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
*
*
*
*
*
*
Glass passivated chip
High current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
DO - 41
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 75
°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
F
= 1.0 Amp.
Maximum DC Reverse Current
at rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
C
J
R
θ
JA
T
J
T
STG
1N
1N
1N
1N
1N
1N
1N
4001G 4002G 4003G 4004G 4005G 4006G 4007G
50
100
200
400
600
800
1000
35
50
70
100
140
200
280
400
1.0
30
1.0
5.0
50
8
45
- 65 to + 175
- 65 to + 175
420
600
560
800
700
1000
BY
133G
1300
910
1300
UNIT
V
V
V
A
A
V
µA
µA
pF
°C/W
°C
°C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 02 : March 25, 2005

BY133G Related Products

BY133G 1N4001G 1N4003G 1N4004G 1N4005G 1N4006G 1N4002G
Description 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 SILICON, SIGNAL DIODE SIGNAL DIODE
Shell connection ISOLATED isolation - ISOLATED ISOLATED - -
Diode component materials SILICON silicon - SILICON SILICON - -
Diode type RECTIFIER DIODE Signal diode Signal diode RECTIFIER DIODE RECTIFIER DIODE - SIGNAL DIODE
Number of components 1 1 - 1 1 - -
Number of terminals 2 2 - 2 2 - -
Maximum repetitive peak reverse voltage 1300 V 50 V - 400 V 600 V - -
Terminal form WIRE Wire - WIRE WIRE - -
Terminal location AXIAL AXIAL - AXIAL AXIAL - -

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