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NCE65R900I

Description
N-Channel Super Junction Power MOSFET ll
File Size783KB,9 Pages
ManufacturerWuxi NCE Power Semiconductor Co., Ltd
Websitehttp://www.ncepower.com/
Download Datasheet View All

NCE65R900I Overview

N-Channel Super Junction Power MOSFET ll

NCE65R900I,NCE65R900K
N-Channel
Super Junction Power MOSFET
General Description
The
series of devices
use advanced super junction
technology and design to provide excellent R
DS(ON)
with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
V
DS
R
DS(ON).
I
D
650
900
5
V
A
Features
●New
technology for high voltage device
●Low
on-resistance and low conduction losses
●Small
package
●Ultra
Low Gate Charge cause lower driving requirements
●100%
Avalanche Tested
●ROHS
compliant
Application
Power factor correction(PFC)
Switched mode power supplies(SMPS)
Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
NCE65R900I
NCE65R900K
Device Package
TO-251
TO-252
Marking
NCE65R900I
NCE65R900K
TO-251
Absolute Maximum Ratings (T
C
=25℃)
Parameter
Symbol
Drain-Source Voltage (
V
GS=
0V)
V
DS
Gate-Source Voltage (
V
DS=
0V)
V
GS
Continuous Drain Current at Tc=25°C
I
D (DC)
Continuous Drain Current at Tc=100°C
I
D (DC)
(Note 1)
I
DM (pluse)
Pulsed drain current
Drain Source voltage slope, VDS = 480 V, ID = 5 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25
℃)
Derate above 25
°C
(Note2)
TO-252
Table 1.
Value
650
±30
5
3
15
48
49
0.39
Unit
V
V
A
A
A
dv/dt
V/ns
W
W/
°C
P
D
E
AS
I
AR
Single pulse avalanche energy
Avalanche current
(Note 1)
135
2.5
mJ
A
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
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