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IPP065N03LG

Description
50 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
CategoryDiscrete semiconductor    The transistor   
File Size345KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

IPP065N03LG Overview

50 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

IPP065N03LG Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeTO-220AB
package instructionGREEN, PLASTIC, TO-220, 3 PIN
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)60 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)50 A
Maximum drain current (ID)50 A
Maximum drain-source on-resistance0.0095 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)56 W
Maximum pulsed drain current (IDM)350 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Type
IPP065N03L G
IPB065N03L G
OptiMOS
3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
1)
for target applications
• N-channel, logic level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
IPP065N03L G
IPB065N03L G
Product Summary
V
DS
R
DS(on),max
I
D
30
6.5
50
V
mΩ
A
Package
Marking
PG-TO220-3-1
065N03L
PG-TO263-3
065N03L
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
Pulsed drain current
2)
Avalanche current, single pulse
3)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1)
Value
50
50
50
42
350
50
60
6
±20
Unit
A
I
D,pulse
I
AS
E
AS
dv /dt
V
GS
T
C
=25 °C
T
C
=25 °C
I
D
=20 A,
R
GS
=25
I
D
=50 A,
V
DS
=24 V,
di /dt =200 A/µs,
T
j,max
=175 °C
mJ
kV/µs
V
J-STD20 and JESD22
Rev. 2.0
page 1
2010-04-22

IPP065N03LG Related Products

IPP065N03LG IPB065N03LG
Description 50 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 50 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
Parts packaging code TO-220AB D2PAK
package instruction GREEN, PLASTIC, TO-220, 3 PIN SMALL OUTLINE, R-PSSO-G2
Contacts 3 4
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Other features AVALANCHE RATED, LOGIC LEVEL COMPATIBLE AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas) 60 mJ 60 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (Abs) (ID) 50 A 50 A
Maximum drain current (ID) 50 A 50 A
Maximum drain-source on-resistance 0.0095 Ω 0.0095 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-263AB
JESD-30 code R-PSFM-T3 R-PSSO-G2
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 56 W 56 W
Maximum pulsed drain current (IDM) 350 A 350 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal surface Matte Tin (Sn) MATTE TIN
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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