UHBS30-1
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI UHBS30-1
is Designed for
Class C, FM Base Applications up to
900 MHz.
PACKAGE STYLE .230 6L FLG
A
.040x45°
4X .025 R
.115
.430 D
E
.125
G
H
I
F
C
B
2XØ.130
FEATURES:
•
Internal Input Matching Network
•
P
G
= 7.5 dB at 30 W/900 MHz
•
Omnigold™
Metalization System
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
9.0 A
DIM
MINIMUM
inches / mm
J K
L
MAXIMUM
inches / mm
50 V
30 V
4.0 V
100 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.5°C/W
A
B
C
D
E
F
G
H
I
J
K
L
.355 / 9.02
.115 / 2.92
.075 / 1.91
.225 / 5.72
.090 / 2.29
.720 / 18.29
.970 / 24.64
.355 / 9.02
.004 / 0.10
.120 / 3.05
.160 / 4.06
.230 / 5.84
.365 / 9.27
.125 / 3.18
.085 / 2.16
.235 / 5.97
.110 / 2.79
.730 / 18.54
.980 / 24.89
.365 / 9.27
.006 / 0.15
.130 / 3.30
.180 / 4.57
.260 / 6.60
ORDER CODE: ASI10670
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CBO
I
CES
h
FE
C
ob
P
G
η
C
I
C
= 50 mA
I
C
= 50 mA
I
E
= 10 mA
V
CE
= 15 V
V
CE
= 24 V
V
CE
= 5.0 V
V
CB
= 25 V
V
CE
= 24 V
T
C
= 25 °C
NONETEST
CONDITIONS
R
BE
= 10
Ω
MINIMUM TYPICAL MAXIMUM
30
50
4.0
5
10
UNITS
V
V
V
mA
mA
---
pF
dB
%
I
C
= 1.0 A
f = 1.0 MHz
P
OUT
= 30 W
f = 900 GHz
10
---
50
7.5
55
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice
.
REV. B
1/1
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EEWORLD
