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D5030UK

Description
ROHS COMPLIANT METAL GATE RF SILICON FET
File Size95KB,5 Pages
ManufacturerSEME-LAB
Websitehttp://www.semelab.co.uk
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ROHS COMPLIANT METAL GATE RF SILICON FET

TetraFET
D5030UK
ROHS COMPLIANT
METAL GATE RF SILICON FET
MECHANICAL DATA
C
(2 pls)
B
G
(typ)
2
1
H
D
3
P
(2 pls) A
5
4
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
400W – 50V – 175MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
E
(4 pls)
F
I
N
M
O
J
K
• SUITABLE FOR BROAD BAND APPLICATIONS
DRAIN 1
GATE 2
DR
PIN 1
PIN 3
PIN 5
SOURCE (COMMON)
DRAIN 2
GATE 1
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
O
P
Millimetres
19.05
10.77
45°
9.78
5.71
27.94
1.52R
10.16
22.22
0.13
2.72
1.70
5.08
34.03
1.61R
Tol.
0.50
0.13
0.13
0.13
0.13
0.13
0.13
MAX
0.02
0.13
0.13
0.50
0.13
0.08
PIN 2
PIN 4
• LOW C
rss
• SIMPLE BIAS CIRCUITS
Inches
0.75
0.424
45°
0.385
0.225
1.100
0.060R
0.400
0.875
0.005
0.107
0.067
0.200
1.340
0.064R
Tol.
0.020
0.005
0.005
0.005
0.005
0.005
0.005
MAX
0.001
0.005
0.005
0.020
0.005
0.003
• LOW NOISE
• HIGH GAIN – 16 dB MINIMUM
APPLICATIONS
VHF/UHF COMMUNICATIONS
from 1 MHz to 250 MHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* per side
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Power Dissipation
Drain – Source Breakdown Voltage*
Gate – Source Breakdown Voltage*
Drain Current*
Storage Temperature
Maximum Operating Junction Temperature
583W
125V
±20V
24A
–65 to 150°C
200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
Document Number 6581
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