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BZW06P102B

Description
600W, BIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size193KB,7 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

BZW06P102B Overview

600W, BIDIRECTIONAL, SILICON, TVS DIODE

BZW06P102B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
package instructionO-PALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Maximum breakdown voltage126 V
Minimum breakdown voltage114 V
Breakdown voltage nominal value120 V
Shell connectionISOLATED
Maximum clamping voltage212 V
ConfigurationSINGLE
Minimum diode capacitance225 pF
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
polarityBIDIRECTIONAL
Maximum power dissipation1.7 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage102 V
Maximum reverse current5 µA
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
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