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2SB1188P-G

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size133KB,5 Pages
ManufacturerWeitron Technology
Websitehttp://weitron.com.tw/
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2SB1188P-G Overview

Transistor

2SB1188P-G Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
2SB1188
Epitaxial Planar PNP Transistors
* “G” Lead(Pb)-Free
SOT-89
1
1. BASE
2. COLLECTOR
3. EMITTER
2
3
C
ABSOLUTE MAXIMUM RATINGS (Ta=25
%
)
Rating
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature, Storage Temperature
* Single pulse Pw = 100ms
VCBO
VCEO
VEBO
IC
ICP
P
C
T j, Tstg
-40
-32
-5
-2
-3
0.5
150, -55 to +150
Vdc
Vdc
Vdc
A(DC)
A (Pulse)*
W
%
C
C
ELECTRICAL CHARACTERISTICS (Ta=25
%
unless otherwise noted )
Parameter
Symbol
Collector-Base Breakdown Voltage (Ic=-50uA)
Collector-Emitter Breakdown Voltage (Ic=-1mA)
Emitter-Base Breakdown Voltage (I
E
=-50uA)
Collector Cutoff Current (V
CB
=-20)
Emitter Cutoff Current (V
EB
=-4V)
BV
CBO
BV
CEO
BV
EBO
ICBO
IEBO
Min
Typ
-
-
-
-
-
Max
-
-
-
Unit
-40
-32
-5
-
-
V
V
V
uA
uA
-1
-1
WEITRON
http://www.weitron.com.tw

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