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2SB1275TL/P

Description
1.5mA, 160V, PNP, Si, SMALL SIGNAL TRANSISTOR, CPT3, SC-63, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size67KB,2 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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2SB1275TL/P Overview

1.5mA, 160V, PNP, Si, SMALL SIGNAL TRANSISTOR, CPT3, SC-63, 3 PIN

2SB1275TL/P Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSC-63
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompli
Shell connectionCOLLECTOR
Maximum collector current (IC)0.0015 A
Collector-emitter maximum voltage160 V
ConfigurationSINGLE
Minimum DC current gain (hFE)82
JESD-30 codeR-PSSO-G2
JESD-609 codee2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power consumption environment10 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN COPPER
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
VCEsat-Max1 V
Base Number Matches1
2SB1275 / 2SB1236A
Transistors
Power Transistor (−160V ,
−1.5A)
2SB1275 / 2SB1236A
!Features
1) High breakdown voltage.(BV
CEO
= −160V)
2) Low collector output capacitance.
(Typ. 30pF at V
CB
=
10V)
3) High transition frequency.(f
T
=
50MH
Z
)
4) Complements the 2SD1918 / 2SD1857A.
!External
dimensions
(Units : mm)
2SB1275
0.75
5.5
1.5
(3) (2) (1)
2.3
0.9
0.9
0.65
2.3
1.0
0.5
0.5
1.5
2.5
9.5
2.3
0.8Min.
5.1
6.5
C0.5
!Absolute
maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
2SB1275
power
dissipation 2SB1236A
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
−160
−160
−5
−1.5
−3
1
P
C
Tj
Tstg
10
1
150
−55∼+150
Unit
V
V
V
A(DC)
A(Pulse)
W(Tc
=
25°C)
W
°C
°C
ROHM : CPT3
EIAJ : SC-63
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
2SB1236A
1
0.65Max.
6.8
2.5
0.9
1.0
4.4
2
(1) (2) (3)
2.54 2.54
0.5
1.05
14.5
0.45
1 Single pulse Pw=100ms
2 Printed circuit board 1.7mm thick, collector plating 1cm
2
or larger.
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
!Packaging
specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SB1275
CPT3
NP
TL
2500
2SB1236A
ATV
PQ
TV2
2500
!Electrical
characteristics
(Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current
transfer ratio
2SB1275
2SB1236A
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
Cob
Min.
Typ.
Max.
Unit
V
V
V
µA
µA
V
V
I
C
= −
50µA
I
C
= −
1mA
I
E
= −
50µA
V
CB
= −
120V
V
EB
= −
4V
I
C
/I
B
= −
1A/
0.1A
I
C
/I
B
=−
1A/
0.1A
V
CE
= −
5V , I
C
= −
0.1A
V
CE
= −
5V , I
E
=
0.1A , f
=
30MHz
V
CB
= −
10V , I
E
=
0A , f
=
1MHz
Conditions
160
160
5
56
82
50
30
1
1
2
1.5
180
270
MHz
pF
Transition frequency
Output capacitance
Measured using pulse current.

2SB1275TL/P Related Products

2SB1275TL/P 2SB1275TL/N 2SB1236ATV2/Q 2SB1236ATV2/P
Description 1.5mA, 160V, PNP, Si, SMALL SIGNAL TRANSISTOR, CPT3, SC-63, 3 PIN 1.5mA, 160V, PNP, Si, SMALL SIGNAL TRANSISTOR, CPT3, SC-63, 3 PIN 1.5mA, 160V, PNP, Si, SMALL SIGNAL TRANSISTOR, ATV, 3 PIN 1.5mA, 160V, PNP, Si, SMALL SIGNAL TRANSISTOR, ATV, 3 PIN
Is it Rohs certified? conform to conform to conform to conform to
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3 3 3
Reach Compliance Code compli compli compli compli
Maximum collector current (IC) 0.0015 A 0.0015 A 0.0015 A 0.0015 A
Collector-emitter maximum voltage 160 V 160 V 160 V 160 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 82 56 120 82
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSIP-T3 R-PSIP-T3
JESD-609 code e2 e2 e1 e1
Number of components 1 1 1 1
Number of terminals 2 2 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) 260 260 260 260
Polarity/channel type PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES NO NO
Terminal surface TIN COPPER TIN COPPER TIN SILVER COPPER TIN SILVER COPPER
Terminal form GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 10 10 10 10
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 50 MHz 50 MHz 50 MHz 50 MHz
VCEsat-Max 1 V 1 V 2 V 2 V
Base Number Matches 1 1 1 1

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