LMC660AMD datasheet, PDF - EEWORLD Datasheet

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LMC660AMD: DescriptionQUAD OP-AMP, 3500uV OFFSET-MAX, 1.4MHz BAND WIDTH, CDIP14, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-14; CategoryAnalog mixed-signal IC Amplifier circuit; File Size470KB，15 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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LMC660AMD Overview

QUAD OP-AMP, 3500uV OFFSET-MAX, 1.4MHz BAND WIDTH, CDIP14, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-14

LMC660AMD Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Texas Instruments
package instruction	DIP, DIP14,.3
Reach Compliance Code	unknown
ECCN code	EAR99
Amplifier type	OPERATIONAL AMPLIFIER
Architecture	VOLTAGE-FEEDBACK
Maximum average bias current (IIB)	0.0001 µA
Maximum bias current (IIB) at 25C	0.00002 µA
Minimum Common Mode Rejection Ratio	70 dB
Nominal Common Mode Rejection Ratio	83 dB
frequency compensation	YES
Maximum input offset voltage	3500 µV
JESD-30 code	R-CDIP-T14
JESD-609 code	e0
length	19.304 mm
low-bias	YES
low-dissonance	NO
micropower	YES
Nominal Negative Supply Voltage (Vsup)
Number of functions	4
Number of terminals	14
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP14,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5/15 V
Certification status	Not Qualified
Maximum seat height	4.572 mm
minimum slew rate	0.8 V/us
Nominal slew rate	1.1 V/us
Maximum slew rate	2.9 mA
Supply voltage upper limit	16 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Nominal Uniform Gain Bandwidth	1400 kHz
Minimum voltage gain	100000
width	7.62 mm

LMC660AMD Related Products

	LMC660AMD	LMC660AMJ/883	LMC660EM	LMC660EN
Description	QUAD OP-AMP, 3500uV OFFSET-MAX, 1.4MHz BAND WIDTH, CDIP14, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-14	QUAD OP-AMP, 3500uV OFFSET-MAX, 1.4MHz BAND WIDTH, CDIP14, CERDIP-14	QUAD OP-AMP, 6500uV OFFSET-MAX, 1.4MHz BAND WIDTH, PDSO14, SO-14	QUAD OP-AMP, 6500uV OFFSET-MAX, 1.4MHz BAND WIDTH, PDIP14, PLASTIC, DIP-14
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments
package instruction	DIP, DIP14,.3	DIP, DIP14,.3	SOP, SOP14,.25	DIP, DIP14,.3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Amplifier type	OPERATIONAL AMPLIFIER	OPERATIONAL AMPLIFIER	OPERATIONAL AMPLIFIER	OPERATIONAL AMPLIFIER
Architecture	VOLTAGE-FEEDBACK	VOLTAGE-FEEDBACK	VOLTAGE-FEEDBACK	VOLTAGE-FEEDBACK
Maximum average bias current (IIB)	0.0001 µA	0.0001 µA	0.00006 µA	0.00006 µA
Maximum bias current (IIB) at 25C	0.00002 µA	0.00002 µA	0.00006 µA	0.00006 µA
Minimum Common Mode Rejection Ratio	70 dB	70 dB	63 dB	63 dB
Nominal Common Mode Rejection Ratio	83 dB	70 dB	83 dB	83 dB
frequency compensation	YES	YES	YES	YES
Maximum input offset voltage	3500 µV	3500 µV	6500 µV	6500 µV
JESD-30 code	R-CDIP-T14	R-GDIP-T14	R-PDSO-G14	R-PDIP-T14
JESD-609 code	e0	e0	e0	e0
length	19.304 mm	19.43 mm	8.65 mm	19.18 mm
low-bias	YES	YES	YES	YES
low-dissonance	NO	NO	NO	NO
micropower	YES	YES	YES	YES
Number of functions	4	4	4	4
Number of terminals	14	14	14	14
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-40 °C	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	DIP	SOP	DIP
Encapsulate equivalent code	DIP14,.3	DIP14,.3	SOP14,.25	DIP14,.3
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	SMALL OUTLINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5/15 V	5/15 V	5/15 V	5/15 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	4.572 mm	5.08 mm	1.75 mm	5.08 mm
minimum slew rate	0.8 V/us	0.8 V/us	0.8 V/us	0.8 V/us
Nominal slew rate	1.1 V/us	1.1 V/us	1.1 V/us	1.1 V/us
Maximum slew rate	2.9 mA	2.9 mA	3 mA	3 mA
Supply voltage upper limit	16 V	16 V	16 V	16 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V
surface mount	NO	NO	YES	NO
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	AUTOMOTIVE	AUTOMOTIVE
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	GULL WING	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	1.27 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Nominal Uniform Gain Bandwidth	1400 kHz	1400 kHz	1400 kHz	1400 kHz
Minimum voltage gain	100000	100000	50000	50000
width	7.62 mm	7.62 mm	3.9 mm	7.62 mm

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