UTC D882SS
NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to B772SS
2
1
APPLICATIONS
* Audio power amplifier
* DC-DC convertor
* Voltage regulator
3
MARKING
SOT-23
D82
1: EMITTER 2: BASE 3: COLLECTOR
*Pb-free plating product number: D882SSL
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C ,unless otherwise specified )
PARAMETERS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation( Tc=25°C)
Collector dissipation( Ta=25°C)
Collector current(DC)
Collector current(PULSE)
Base current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Pc
Ic
Ic
I
B
T
j
T
STG
RATING
40
30
5
10
1
3
7
0.6
150
-55 ~ +150
UNIT
V
V
V
W
W
A
A
A
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C,unless otherwise specified)
PARAMETER
Collector cut-off current
Emitter cut-off current
DC current gain(note 1)
SYMBOL
TEST CONDITIONS
V
CB
=30V,I
E
=0
V
EB
=3V,Ic=0
V
CE
=2V,Ic=20mA
V
CE
=2V,Ic=1A
Ic=2A,I
B
=0.2A
Ic=2A,I
B
=0.2A
V
CE
=5V,Ic=0.1A
V
CB
=10V,I
E
=0,f=1MHz
MIN
TYP
MAX
1000
1000
UNIT
nA
nA
I
CBO
I
EBO
h
FE1
h
FE2
Collector-emitter saturation voltage
V
CE
(sat)
Base-emitter saturation voltage
V
BE
(sat)
Current gain bandwidth product
f
T
Output capacitance
Cob
Note 1:Pulse test:PW<300µs,Duty Cycle<2%
30
100
200
150
0.3
1.0
80
45
400
0.5
2.0
V
V
MHz
pF
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R206-018,A
UTC D882SS
RANK
RANGE
NPN EPITAXIAL SILICON TRANSISTOR
Q
100-200
P
160-320
E
200-400
CLASSIFICATION OF hFE2
TYPICAL PARAMETERS PERFORMANCE
Fig.1 Static characteristics
150
Fig.2 Derating curve of safe
operating areas
12
Fig.3 Power Derating
-Ic,Collector current(A)
1.6
1.2
-IB=6mA
-IB=5mA
100
Power Dissipation(W)
150
200
- Ic Derating(%)
-IB=9mA
-IB=8MA
-IB=7mA
S/
b
8
0.8
lim
ite
d
D
pa
si
is
-IB=4mA
-IB=3mA
-IB=2mA
-IB=1mA
50
4
n
tio
0.4
lim
d
ite
0
0
4
8
12
16
20
0
-50
0
50
100
0
-50
0
50
100
150
200
-Collector-Emitter voltage(V)
Tc,Case Temperature(°C)
Tc,Case Temperature(°C)
Fig.4 Collector Output
capacitance
3
10
3
10
Fig.5 Current gain-
bandwidth product
1
10
Fig.6 Safe operating area
Ic(max),Pulse
Ic(max),DC
10
mS
1m
S
S
1m
0.
Output Capacitance(pF)
F
T
(MHz), Current gain-
bandwidth product
2
10
I
E
=0
f=1MHz
V
CE
=5V
2
10
-Ic,Collector current(A)
0
1
10
10
0
I
B
=8mA
1
10
1
10
-1
10
0
10
10
0
-1
10
-2
10
-3
10
0
10
-2
10
-1
10
-2
10
10
10
0
1
10
2
10
-Collector-Base Voltage(v)
Ic,Collector current(A)
Collector-Emitter Voltage
Fig.7 DC current gain
3
10
4
10
Fig.8 Saturation Voltage
V
CE
=-2V
-Saturation Voltage(mV)
DC current Gain,H
FE
3
10
V
BE
(sat)
2
10
2
10
1
10
V
CE
(sat)
1
10
0
10
0
10
1
10
2
10
3
10
4
10
0
10
0
10
1
10
2
10
3
10
4
10
-Ic,Collector current(mA)
-Ic,Collector current(mA)
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R206-018,A
UTC D882SS
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO. LTD
3
QW-R206-018,A
京公网安备 11010802033920号
EEWORLD
