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2SC4550

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size243KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SC4550 Overview

Transistor

2SC4550 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC4550
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 60V(Min)
·High
DC Current Gain-
: h
FE
=
100(Min)@ (V
CE
= 2V , I
C
= 1.5A)
·Low
Saturation Voltage-
: V
CE(sat)
=
0.3V(Max)@ (I
C
= 4A, I
B
= 0.2A)
B
APPLICATIONS
·Designed
for use as a driver in DC/DC converters and
actuators.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Base Current-Continuous
Total Power Dissipation @T
C
=25℃
w
.cn
i
em
cs
.is
w
w
VALUE
100
60
UNIT
V
V
7.0
V
7.0
14
3.5
30
W
2.0
150
-55~150
A
A
A
P
T
Total Power Dissipation @T
a
=25℃
T
J
T
stg
Junction Temperature
Storage Temperature
isc Website:www.iscsemi.cn

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Description Transistor Transistor Transistor
Reach Compliance Code unknow unknow unknow
Base Number Matches 1 1 1
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