INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC4550
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 60V(Min)
·High
DC Current Gain-
: h
FE
=
100(Min)@ (V
CE
= 2V , I
C
= 1.5A)
·Low
Saturation Voltage-
: V
CE(sat)
=
0.3V(Max)@ (I
C
= 4A, I
B
= 0.2A)
B
APPLICATIONS
·Designed
for use as a driver in DC/DC converters and
actuators.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Base Current-Continuous
Total Power Dissipation @T
C
=25℃
w
.cn
i
em
cs
.is
w
w
VALUE
100
60
UNIT
V
V
7.0
V
7.0
14
3.5
30
W
2.0
150
-55~150
℃
℃
A
A
A
P
T
Total Power Dissipation @T
a
=25℃
T
J
T
stg
Junction Temperature
Storage Temperature
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEX(SUS)
V
CE
(sat)-
1
V
CE
(sat)-
2
V
BE
(sat)-
1
V
BE
(sat)-
2
I
CBO
I
CER
I
CEX
I
EBO
h
FE-1
h
FE-2
h
FE-3
C
OB
f
T
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
CONDITIONS
I
C
= 4.0A ; I
B
= 0.4A, L= 1mH
I
C
= 4.0A ; I
B1
= -I
B2
= 0.4A,
V
BE(OFF)
=-1.5V, L=180μH,clamped
I
C
= 4A; I
B
= 0.2A
B
2SC4550
MIN
60
60
TYP.
MAX
UNIT
V
V
0.3
0.5
1.2
1.5
10
1.0
10
1.0
10
V
V
V
V
μA
mA
μA
mA
μA
I
C
= 6A; I
B
= 0.3A
B
I
C
= 4A; I
B
= 0.2A
B
I
C
= 6A; I
B
= 0.3A
B
Output Capacitance
Current-Gain—Bandwidth Product
w
.cn
i
em
cs
.is
w
w
V
CE
= 60V ; R
BE
= 50Ω,T
a
=125℃
V
CE
= 60V; V
BE(off)
= -1.5V
V
CE
= 60V; V
BE(off)
= -1.5V,T
a
=125℃
V
EB
= 5V; I
C
= 0
I
C
= 0.7A ; V
CE
= 2V
100
I
C
= 1.5A ; V
CE
= 2V
100
60
I
C
= 4.0A ; V
CE
= 2V
I
E
= 0 ; V
CB
= 10V; f= 1.0MHz
I
C
= 1A ; V
CE
= 10V
100
150
I
C
= 4.0A ,R
L
= 12.5Ω,
I
B1
= -I
B2
= 0.2A,V
CC
≈
50V
V
CB
= 60V ; I
E
= 0
400
pF
MHz
Switching times
t
on
t
stg
t
f
Turn-on Time
Storage Time
Fall Time
0.3
1.5
0.3
μs
μs
μs
h
FE-2
Classifications
M
100-200
L
150-300
K
200-400
isc Website：www.iscsemi.cn
2
stm32/stm8
京公网安备 11010802033920号
EEWORLD
