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D2232UKG4

Description
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC, F-0127, 8 PIN
CategoryDiscrete semiconductor    The transistor   
File Size29KB,2 Pages
ManufacturerSEMELAB
Environmental Compliance  
Download Datasheet Parametric Compare View All

D2232UKG4 Overview

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC, F-0127, 8 PIN

D2232UKG4 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSEMELAB
package instructionSMALL OUTLINE, R-CDSO-N8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
ConfigurationSINGLE
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)8 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDSO-N8
JESD-609 codee4
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
TetraFET
D2232UK
ROHS COMPLIANT
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
5.50 ± 0.15
1.27 ± 0.05
2 PL.
2 PL.
0.47
1.65
2 PL.
0.3 R.
4 PL.
2.313
± 0.2
4
3
3.00 2.07
0.381
2 PL. 2 PL.
5
1.27
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 7.2V – 850MHz
SINGLE ENDED
0.360
± 0.005
6
1.27
6.50 ±
0.15
2
1
0.47
2 PL.
0.80
4 PL.
4.90 ± 0.15
7
1.27
8
0.10 R.
TYP.
FEATURES
0.10
TYP.
0.508
0.10
TYP.
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND
APPLICATIONS
F-0127 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE
• VERY LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
Ceramic Material: Alumina.
Parts can also be supplied with AlN or BeO for
improved thermal resistance.
Contact Semelab for details.
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
29W
40V
±20V
8A
–65 to 150°C
200°C
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
Website
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
Prelim. 5/99

D2232UKG4 Related Products

D2232UKG4
Description UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC, F-0127, 8 PIN
Is it lead-free? Lead free
Is it Rohs certified? conform to
Maker SEMELAB
package instruction SMALL OUTLINE, R-CDSO-N8
Contacts 8
Reach Compliance Code compliant
ECCN code EAR99
Other features LOW NOISE
Configuration SINGLE
Minimum drain-source breakdown voltage 40 V
Maximum drain current (ID) 8 A
FET technology METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND
JESD-30 code R-CDSO-N8
JESD-609 code e4
Number of components 1
Number of terminals 8
Operating mode ENHANCEMENT MODE
Maximum operating temperature 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type N-CHANNEL
Certification status Not Qualified
surface mount YES
Terminal surface GOLD
Terminal form NO LEAD
Terminal location DUAL
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications AMPLIFIER
Transistor component materials SILICON
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