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DDTC143ECA-13

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size73KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

DDTC143ECA-13 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

DDTC143ECA-13 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerDiodes
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)20
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)235
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
DDTC
(R1 = R2 SERIES)
CA
NPN PRE-BIASED SMALL SIGNAL SOT-23
SURFACE MOUNT TRANSISTOR
Features
NEW PRODUCT
·
·
·
·
Epitaxial Planar Die Construction
Complementary PNP Types Available (DDTA)
Built-In Biasing Resistors, R1 = R2
Available in Lead Free/RoHS Compliant Version (Note 2)
TOP VIEW
A
OUT
B
GND
D
G
H
K
J
L
C
SOT-23
Dim
A
B
C
D
M
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 4, on Page 2
Marking: Date Code and Marking Code (See Table Below
& Page 2)
Ordering Information (See Page 2)
Weight: 0.008 grams (approximate)
IN
E
E
G
H
J
K
L
M
a
R
1
IN
R
2
OUT
GND
All Dimensions in mm
IN
GND
OUT
P/N
DDTC123ECA
DDTC143ECA
DDTC114ECA
DDTC124ECA
DDTC144ECA
DDTC115ECA
R1, R2 (NOM) Type Code
2.2KW
4.7KW
10KW
22KW
47KW
100KW
N04
N08
N13
N17
N20
N24
SCHEMATIC DIAGRAM
Maximum Ratings
Supply Voltage, (3) to (1)
Input Voltage, (2) to (1)
@ T
A
= 25°C unless otherwise specified
Symbol
V
CC
DDTC123ECA
DDTC143ECA
DDTC114ECA
DDTC124ECA
DDTC144ECA
DDTC115ECA
DDTC123ECA
DDTC143ECA
DDTC114ECA
DDTC124ECA
DDTC144ECA
DDTC115ECA
All
Value
50
-10 to +12
-10 to +30
-10 to +40
-10 to +40
-10 to +40
-10 to +40
100
100
50
30
100
20
100
200
625
-55 to +150
Unit
V
Characteristic
V
IN
V
Output Current
I
O
mA
Output Current
Power Dissipation
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
Note:
I
C
(Max)
P
d
R
qJA
T
j
, T
STG
mA
mW
°C/W
°C
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30329 Rev. 5 - 2
1 of 3
www.diodes.com
DDTC (R1 = R2 SERIES) CA
ã
Diodes Incorporated

DDTC143ECA-13 Related Products

DDTC143ECA-13 DDTC115ECA-13 DDTC123ECA-13
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.02A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
Is it lead-free? Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible
Maker Diodes Diodes Diodes
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC) 0.1 A 0.02 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 20 82 20
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 235 235 235
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface TIN LEAD TIN LEAD TIN LEAD
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 10
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz
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