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DTA114YSAB3G

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size388KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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DTA114YSAB3G Overview

Small Signal Bipolar Transistor

DTA114YSAB3G Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instruction,
Reach Compliance Codeunknown
DTA114 YM/YSA
Taiwan Semiconductor
Small Signal Product
PNP Small Signal Transistor
FEATURES
- Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistor
(see equivalent circuit).
- The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
- Only the on/off conditions need to be set for
operation, marking device design easy.
- Packing code with suffix "G" means
green compound (halogen-free)
Equivalent Circuit
PARAMETER
Power Dissipation
Supply Voltage
Input Voltage
Output Current
PeakCollectoCurrent
DT
No A1
t R 14Y
eco SA
mm
en
de
d
SYMBOL
P
D
V
CC
V
IN
I
O
VALUE
YM
100
-50
-40½6
-70
-100
I
C(MAX)
TJ, T
STG
-55 to + 150
SYMBOL
V
I(off)
V
I(on)
I
I
MIN
-0.3
-
-
-
-
TYP
-
-
-
-
-
MAX
-
-1.4
-0.3
-0.5
-
13
5.7
-
V
O(on)
-0.88
I
O(off)
G
I
R
1
R
2
/R
1
f
T
68
7
3.7
-
-
10
4.7
250
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
UNIT
YSA
300
mW
V
V
mA
°C
Junction and Storage Temperature Range
PARAMETER
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
CONDITION
UNIT
V
V
mA
μA
KΩ
V
CC
=-5V, I
O
=-100μA
V
O
=-0.3V, I
O
=-1mA
V
I
=-5V
I
O
/I
I
=-5mA/-0.25mA
V
CC
=-50V, V
I
=0
V
O
=-5V, I
O
=-5mA
V
O
=-10V, I
O
=-5mA, f=100MHz
MHz
Document Number: DS_S0000008
Version: D15
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