TetraFET
D2090UK.01
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
D
E
2
1
I
3
J
H
K
5
4
F
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
750mW – 12V – 1GHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND
M
L
G
A
B
C
SOT–23
PIN 1
PIN 3
SOURCE
SOURCE
PIN 2
PIN 4
DRAIN
SOURCE
PIN 5 GATE
APPLICATIONS
• LOW C
rss
• SIMPLE BIAS CIRCUITS
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
Min
0.90
0.90
0.00
0.25
0.95 ref
1.90 ref
2.80
2.60
0.20
0.35
1.50
0.09
0°
Max
1.45
1.30
0.15
0.50
• LOW NOISE (Typical < 2dB NF)
• HIGH GAIN – 11dB MINIMUM
• SURFACE MOUNT
3.10
3.00
0.55
1.75
0.20
10°
APPLICATIONS
•
VHF/UHF COMMUNICATIONS
from DC to 2.5 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
2W
65V
±20V
200mA
–65 to 125°C
150°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 2718
Issue 2
D2090UK.01
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BV
DSS
I
DSS
I
GSS
g
fs
G
PS
η
C
iss
C
oss
C
rss
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0
V
DS
= 28V
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 750mW
V
DS
= 12V
f = 1GHz
V
DS
= 0V
V
GS
= –5V f = 1MHz
f = 1MHz
f = 1MHz
V
DS
= 28V V
GS
= 0
V
DS
= 28V V
GS
= 0
I
DQ
= 75mA
|
D
= 10mA
V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 0.2A
1
0.18
11
40
10:1
65
Typ.
Max. Unit
V
1
1
7
mA
µA
V
mhos
dB
%
—
12
6
0.5
pF
V
GS(th)
Gate Threshold Voltage*
VSWR Load Mismatch Tolerance
* Pulse Test:
Pulse Duration = 300
µs
, Duty Cycle
≤
2%
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case
Max. 81°C / W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 2718
Issue 2
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