HY27UG084GDM-UEB datasheet, PDF

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HY27UG084GDM-UEB: DescriptionFlash, 512MX8, 30ns, PBGA52, 12 X 17 MM, 0.65 MM HEIGHT, ULGA-52; Categorystorage storage; File Size437KB，53 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HY27UG084GDM-UEB Overview

Flash, 512MX8, 30ns, PBGA52, 12 X 17 MM, 0.65 MM HEIGHT, ULGA-52

HY27UG084GDM-UEB Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SK Hynix
Parts packaging code	LGA
package instruction	VFLGA,
Contacts	52
Reach Compliance Code	unknown
ECCN code	3A991.B.1.A
Maximum access time	30 ns
JESD-30 code	R-PBGA-B52
length	17 mm
memory density	4294967296 bit
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	52
word count	536870912 words
character code	512000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	512MX8
Package body material	PLASTIC/EPOXY
encapsulated code	VFLGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Programming voltage	3.3 V
Certification status	Not Qualified
Maximum seat height	0.65 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BUTT
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
type	SLC NAND TYPE
width	12 mm

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HY27UG(08/16)4G(2/D)M Series

4Gbit (512Mx8bit / 256Mx16bit) NAND Flash

Document Title

4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory

Revision History

Revision

No.

0.0

Initial Draft.

1) Add Errata

tWH

tWP

tWC

History

Draft Date

May. 13. 2005

Remark

Preliminary

0.1

Specification

Relaxed value

May. 23. 2005

Preliminary

1) Correct the Valid Blocks Number.

0.2

Valid Blocks (max)

Before

After

4,098

4,096

Jun. 13. 2005

Preliminary

1) Add tRSBY (Table 11)

- tRSBY (Dummy Busy Time for Cache Read)

0.3

- tRSBY is 5us (typ.)

2) Edit Figure 18, 19

3) Correct Extended Read Status Register Commands (Table. 19)

1) Add ULGA Package.

- Figures & texts are added.

2) Correct the test Conditions (DC Characteristics table)

Test Conditions (

LI,

)

Before

VIN=VOUT=0 to 3.6V

VIN=VOUT=0 to Vcc (max)

JUn. 14. 2005

Preliminary

0.4

After

Sep. 02. 2005

Preliminary

3) Change AC Conditions table

4) Add tWW parameter ( tWW = 100ns, min)

- Texts & Figures are added.

- tWW is added in AC timing characteristics table.

5) Edit System Interface Using CE don’t care Figures.

6) Correct Address Cycle Map.

Rev 0.6 / Dec. 2005

HY27UG(08/16)4G(2/D)M Series

4Gbit (512Mx8bit / 256Mx16bit) NAND Flash

1. SUMMARY DESCRIPTION

The HYNIX HY27UG(08/16)4G(2/D)M series is a 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in

3.3V Vcc Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old

data is erased.

The device contains 4096 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected

Flash cells.

A program operation allows to write the 2112-byte page in typical 200us and an erase operation can be performed in

typical 2ms on a 128K-byte(X8 device) block.

Data in the page mode can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and

data input/output as well as command input. This interface allows a reduced pin count and easy migration towards dif-

ferent densities, without any rearrangement of footprint.

Commands, Data and Addresses are synchronously introduced using CE#, WE#, ALE and CLE input pin.

The on-chip Program/Erase Controller automates all program and erase functions including pulse repetition, where

required, and internal verification and margining of data.

The modifying can be locked using the WP# input pin.

The output pin RB# (open drain buffer) signals the status of the device during each operation. In a system with mul-

tiple memories the RB# pins can be connected all together to provide a global status signal.

Even the write-intensive systems can take advantage of the HY27UG(08/16)4G(2/D)M extended reliability of 100K pro-

gram/erase cycles by providing ECC (Error Correcting Code) with real time mapping-out algorithm.

Optionally the chip could be offered with the CE# don’t care function. This option allows the direct download of the

code from the NAND Flash memory device by a microcontroller, since the CE# transitions do not stop the read opera-

tion.

The copy back function allows the optimization of defective blocks management: when a page program operation fails

the data can be directly programmed in another page inside the same array section without the time consuming serial

data insertion phase.

The cache program feature allows the data insertion in the cache register while the data register is copied into the

flash array. This pipelined program operation improves the program throughput when long files are written inside the

memory.

A cache read feature is also implemented. This feature allows to dramatically improve the read throughput when con-

secutive pages have to be streamed out.

This device includes also extra features like OTP/Unique ID area, Block Lock mechanism, Automatic Read at Power Up,

Read ID2 extension.

The HYNIX HY27UG(08/16)4G(2/D)M series is available in 48 - TSOP1 12 x 20 mm, 52-ULGA 12 x 17 mm.

1.1 Product List

PART NUMBER

HY27UG084G(2/D)M

HY27UG164G2M

ORIZATION

x16

VCC RANGE

2.7 - 3.6 Volt

PACKAGE

48TSOP1/52-ULGA

48TSOP1

Rev 0.6 / Dec. 2005

HY27UG084GDM-UEB Related Products

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Description	Flash, 512MX8, 30ns, PBGA52, 12 X 17 MM, 0.65 MM HEIGHT, ULGA-52	Flash, 512MX8, 30ns, PBGA52, 12 X 17 MM, 0.65 MM HEIGHT, ULGA-52	Flash, 512MX8, 30ns, PBGA52, 12 X 17 MM, 0.65 MM HEIGHT, ULGA-52	Flash, 512MX8, 30ns, PBGA52, 12 X 17 MM, 0.65 MM HEIGHT, ULGA-52	Flash, 512MX8, 30ns, PBGA52, 12 X 17 MM, 0.65 MM HEIGHT, ULGA-52	Flash, 512MX8, 30ns, PBGA52, 12 X 17 MM, 0.65 MM HEIGHT, ULGA-52	Flash, 512MX8, 30ns, PBGA52, 12 X 17 MM, 0.65 MM HEIGHT, ULGA-52	Flash, 512MX8, 30ns, PBGA52, 12 X 17 MM, 0.65 MM HEIGHT, ULGA-52	Flash, 512MX8, 30ns, PBGA52, 12 X 17 MM, 0.65 MM HEIGHT, ULGA-52
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	LGA	LGA	LGA	LGA	LGA	LGA	LGA	LGA	LGA
package instruction	VFLGA,	12 X 17 MM, 0.65 MM HEIGHT, ULGA-52	VFLGA,	VFLGA,	VFLGA,	VFLGA,	VFLGA,	VFLGA,	VFLGA,
Contacts	52	52	52	52	52	52	52	52	52
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A
Maximum access time	30 ns	30 ns	30 ns	30 ns	30 ns	30 ns	30 ns	30 ns	30 ns
JESD-30 code	R-PBGA-B52	R-PBGA-B52	R-PBGA-B52	R-PBGA-B52	R-PBGA-B52	R-PBGA-B52	R-PBGA-B52	R-PBGA-B52	R-PBGA-B52
length	17 mm	17 mm	17 mm	17 mm	17 mm	17 mm	17 mm	17 mm	17 mm
memory density	4294967296 bit	4294967296 bit	4294967296 bit	4294967296 bit	4294967296 bit	4294967296 bit	4294967296 bit	4294967296 bit	4294967296 bit
Memory IC Type	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH
memory width	8	8	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1	1	1
Number of terminals	52	52	52	52	52	52	52	52	52
word count	536870912 words	536870912 words	536870912 words	536870912 words	536870912 words	536870912 words	536870912 words	536870912 words	536870912 words
character code	512000000	512000000	512000000	512000000	512000000	512000000	512000000	512000000	512000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	70 °C	85 °C	70 °C	85 °C	70 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-25 °C	-	-40 °C	-	-40 °C	-	-40 °C	-25 °C	-25 °C
organize	512MX8	512MX8	512MX8	512MX8	512MX8	512MX8	512MX8	512MX8	512MX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	VFLGA	VFLGA	VFLGA	VFLGA	VFLGA	VFLGA	VFLGA	VFLGA	VFLGA
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Programming voltage	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	OTHER	OTHER
Terminal form	BUTT	BUTT	BUTT	BUTT	BUTT	BUTT	BUTT	BUTT	BUTT
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
type	SLC NAND TYPE	NAND TYPE	SLC NAND TYPE	SLC NAND TYPE	SLC NAND TYPE	SLC NAND TYPE	SLC NAND TYPE	SLC NAND TYPE	SLC NAND TYPE
width	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm
Maker	SK Hynix	-	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix

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