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2SA2093TV2

Description
Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, ATV, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size933KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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2SA2093TV2 Overview

Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, ATV, 3 PIN

2SA2093TV2 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)310 MHz
Base Number Matches1
Power transistor (60V,
2A)
2SA2093
Features
1) High speed switching.
(tf : Typ. : 30ns at I
C
=
2A)
2) Low saturation voltage, typically
(Typ. :
200mV at I
C
=
1.0A, I
B
=
0.1A)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SC5880
Dimensions
(Unit : mm)
ATV
Applications
Small signal low frequency amplifier
High speed switching
(1) Emitter
(2) Collector
(3) Base
Abbreviated symbol :
A2093
Taping specifications
Structure
PNP epitaxial planar silicon transistor
Packaging
specifications
Package
Type
Taping
TV2
2500
Code
Basic ordering unit (pieces)
2SA2093
Absolute
maximum ratings
(Ta=25C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
DC
I
C
I
CP
P
C
Limits
−60
−60
−6
−2.0
−4.0
1.0
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗Pw=10ms
Pulsed
Tj
Tstg
www.rohm.com
c
2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.03 - Rev.B

2SA2093TV2 Related Products

2SA2093TV2 2SA2093TV2R 2SA2093TV2Q
Description Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, ATV, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, ATV, 3 PIN trans pnp 60v 2A 3pin atv
Is it Rohs certified? conform to conform to conform to
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3 3
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 2 A 2 A 2 A
Collector-emitter maximum voltage 60 V 60 V 60 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 180 120
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260 260
Polarity/channel type PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED 10 10
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 310 MHz 310 MHz 310 MHz
Base Number Matches 1 1 1
JESD-609 code - e1 e1
Maximum operating temperature - 150 °C 150 °C
Maximum power dissipation(Abs) - 1 W 1 W
Terminal surface - TIN SILVER COPPER TIN SILVER COPPER
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