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2SC4115S

Description
Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC, TO-92S, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size48KB,1 Pages
ManufacturerMicro Commercial Components (MCC)
Download Datasheet Parametric View All

2SC4115S Overview

Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC, TO-92S, 3 PIN

2SC4115S Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
2SC4115S
2SC4115S-Q
2SC4115S-R
2SC4115S-S
NPN
Plastic-Encapsulate
Transistors
Features
Power dissipation: P
CM
= 0.3W(T
amb
=25 )
Collector current: I
CM
= 3A
Collector-base voltage: V
(BR)CBO
= 40V
Operating and storage junction temperature range
T
J
, T
stg
: -55 to + 150
Electrical Characteristics @ 25
Symbol
V
CEO
V
CBO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Unless Otherwise Specified
Min
20
40
6.0
---
---
120
---
200
Typ
---
---
---
---
---
---
---
---
Max
---
---
---
0.1
0.1
560
0.5
---
Unit
V
Parameter
Collector-Emitter Voltage
(I
C
=-50­A, I
E
=0)
Collector-Base Voltage
(I
C
=-1­A, I
B
=0)
Emitter-Base Voltage
(I
E
=-50­A, I
C
=0)
Collector cut-off Current
(V
CB
=-20V, I
E
=0)
Emitter cut-off Current
(V
EB
=-5V, I
C
=0)
DC current gain
(V
CE
=-2V, I
C
=-0.1A)
Collector-Emitter Saturation Voltage
(I
C
=-2A, I
B
=-0.1A)
Transition Frequency
(V
CE
=2.0Vdc, I
C
=0.5Adc)
TO-92S
A
E
V
V
­A
­A
---
V
MHz
B
C
Measured Using Pulse Current
CLASSIFICATION OF h
FE
Rank
Range
Marking
Q
120-270
4115Q
R
180-390
4115R
S
270-560
4115S
1
2
3
D
1.EMITTER
2.COLLECTOR
3.BASE
G
DIMENSIONS
INCHES
MIN
MAX
.16
.12
.59
---
.02
.08
.20
MM
MIN
4.00
3.00
15.00
0.45
2.00
5.00
---
MAX
NOTE
DIM
A
B
C
D
E
G
www.mccsemi.com
Revision: 2
2007/03/01
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