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2SC5876FRAT106Q

Description
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size1MB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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2SC5876FRAT106Q Overview

Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, 3 PIN

2SC5876FRAT106Q Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionUMT3, 3 PIN
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
GuidelineAEC-Q101
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Base Number Matches1
Medium power transistor (60V, 0.5A)
2SC5876FRA
Features
1) High speed switching. (Tf : Typ. : 80ns at I
C
= 500mA)
2) Low saturation voltage, typically
(Typ. : 150mV at I
C
= 100mA, I
B
= 10mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the
2SA2088FRA
2SA2088
Dimensions
(Unit : mm)
0.65 0.65
0.3
(3)
(2)
(1)
AEC-Q101 Qualified
1.25
2.1
0.2
0.15
Applications
Small signal low frequency amplifier
High speed switching
(1)Emitter
(2)Base
(3)Collector
0.1Min.
Each lead has same dimensions
Abbreviated symbol : VS
Structure
NPN Silicon epitaxial planar transistor
Packaging
specifications
Package
Type
Code
Basic ordering unit
(pieces)
2SC5876
2SC5876FRA
Taping
T106
3000
Absolute
maximum ratings
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
1 Pw=10ms
2 Each terminal mounted on a recommended land.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
60
60
6
0.5
1.0
200
150
−55
to
+150
Unit
V
V
V
A
A
mW
°C
°C
1
2
www.rohm.com
c
2011 ROHM Co., Ltd. All rights reserved.
0.7
0.9
1.3
2.0
UMT3
1/3
2011.03 - Rev.B

2SC5876FRAT106Q Related Products

2SC5876FRAT106Q 2SC5876FRAT106R
Description Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, 3 PIN
Is it Rohs certified? conform to conform to
package instruction UMT3, 3 PIN SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A
Collector-emitter maximum voltage 60 V 60 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 120 180
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Guideline AEC-Q101 AEC-Q101
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 300 MHz 300 MHz
Base Number Matches 1 1
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