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“Standard”:
2.
3.
4.
5.
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7.
8.
9.
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DATA SHEET
SILICON TRANSISTOR
2SC3736
HIGH SPEED SWITCHING
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
DESCRIPTION
The 2SC3736 is designed for power amplifier and high speed
switching applications.
PACKAGE DRAWING (Unit: mm)
4.5 ±0.1
1.6 ±0.2
1.5 ±0.1
FEATURES
2.5 ±0.1
•
Low collector saturation voltage
•
Complementary to the 2SA1460 PNP transistor.
0.42
±0.06
1
2
3
0.42
±0.06
0.47
±0.06
0.8 MIN.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Total Power Dissipation
Junction Temperature
Storage Temperature
Note1
Note2
4.0 ±0.25
•
High speed, high voltage switching
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
P
T
T
j
T
stg
80
45
5.0
1.0
2.0
2.0
150
−55
to +150
V
V
V
A
A
W
°C
°C
1.5 TYP.
0.41
+0.03
–0.05
3.0 TYP.
1: Emitter
2: Collecter (Fin)
3: Base
Notes 1.
PW
≤
10 ms, Duty Cycle
≤
50%
2
2.
Mounted on ceramic substrate of 16 cm x 0.7 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17148EJ3V0DS00 (3rd edition)
(Previous No. TC-1891A)
Date Published May 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
1987
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