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IBM0118165MT3-60

Description
EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 X 0.825 INCH, TSOP2-50/44
Categorystorage    storage   
File Size350KB,31 Pages
ManufacturerIBM
Websitehttp://www.ibm.com
Download Datasheet Parametric View All

IBM0118165MT3-60 Overview

EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 X 0.825 INCH, TSOP2-50/44

IBM0118165MT3-60 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerIBM
Parts packaging codeTSOP2
package instructionTSOP2, TSOP44/50,.46,32
Contacts50
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-G44
JESD-609 codee0
length20.95 mm
memory density16777216 bit
Memory IC TypeEDO DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals44
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP44/50,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
refresh cycle1024
Maximum seat height1.2 mm
self refreshYES
Maximum standby current0.0002 A
Maximum slew rate0.165 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
.
IBM0118165 IBM0118165M
IBM0118165B IBM0118165P
1M x 16 10/10 EDO DRAM
Features
• 1,048,576 word by 16 bit organization
• Single 3.3V
±
0.3V or 5.0V
±
0.5V power supply
• Standard Power (SP) and Low Power (LP)
• 1024 Refresh Cycles
- 16 ms Refresh Rate (SP version)
- 128 ms Refresh Rate (LP version)
• High Performance:
-50 -60
t
RAC
RAS Access Time
t
CAC
CAS Access Time
t
AA
Column Address Access Time
t
RC
Cycle Time
t
HPC
EDO (Hyper Page) Mode
Cycle Time
50
13
25
84
20
60
15
30
-6R
60
17
30
-70 Units
70
20
35
ns
ns
ns
ns
ns
• Low Power Dissipation
- Active (max) - 185 mA / 165 mA / 140 mA
- Standby: TTL Inputs (max) - 1.0 mA
- Standby: CMOS Inputs (max)
- 1.0 mA (SP version)
- 0.2 mA (LP version)
- Self Refresh (LP version only)
- 200µA (3.3 Volt)
- 300µA (5.0 Volt)
• Extended Data Out (Hyper Page) Mode
• Dual CAS Byte Read/Write
• Read-Modify-Write
• RAS Only and CAS before RAS Refresh
• Hidden Refresh
• Package: TSOP-II 50/44 (400milx825mil)
SOJ 42/42 (400mil)
104 104 124
25
25
30
Description
The IBM0118165 is a dynamic RAM organized
1,048,576 words by 16 bits, which has a very low
“sleep mode” power consumption option. These
devices are fabricated in IBM’s advanced 0.5µm
CMOS silicon gate process technology. The circuit
and process have been carefully designed to pro-
vide high performance, low power dissipation, and
high reliability. The devices operate with a single
3.3V
±
0.3V or 5.0V
±
0.5V power supply. The 20
addresses required to access any bit of data are
multiplexed (10 are strobed with RAS, 10 are
strobed with CAS).
Pin Assignments
(Top View)
50/44 TSOP
V
CC
IO0
IO1
IO2
IO3
V
CC
IO4
IO5
IO6
IO7
NC
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
7
8
9
10
11
15
16
17
18
19
20
21
22
23
24
25
50
49
48
47
46
45
44
43
42
41
40
36
35
34
33
32
31
30
29
28
27
26
V
SS
IO15
IO14
IO13
IO12
V
SS
IO11
IO10
IO9
IO8
NC
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
V
SS
V
CC
IO0
IO1
IO2
IO3
V
CC
IO4
IO5
IO6
IO7
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
V
CC
Pin Description
42/42 SOJ
RAS
V
SS
IO15
IO14
IO13
IO12
V
SS
IO11
IO10
IO9
IO8
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
V
SS
Row Address Strobe
L/U Column Address Strobe
Read/Write Input
Address Inputs
Output Enable
Data Input/Output
Power (+3.3V or +5.0V)
Ground
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
LCAS / UCAS
WE
A0 - A9
OE
I/O0 - I/O15
V
CC
V
SS
28H4721
SA14-4223-04
Revised 11/96
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 30
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