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2SC5508-A-FB

Description
RF SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size223KB,10 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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2SC5508-A-FB Overview

RF SMALL SIGNAL TRANSISTOR

2SC5508-A-FB Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Preliminary
Data Sheet
2SC5508
NPN SILICON RF TRANSISTOR
FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
R09DS0055EJ0200
Rev.2.00
Mar 5, 2013
FEATURES
Ideal for low-noise, high-gain amplification applications
NF = 1.1 dB TYP., G
a
= 16 dB TYP. @ V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz
Maximum available power gain: MAG = 19 dB TYP. @ V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
f
T
= 25 GHz technology adopted
Flat-lead 4-pin thin-type super minimold (M04) package
<R>
ORDERING INFORMATION
Part Number
2SC5508
2SC5508-T2
2SC5508-T2B
Order Number
2SC5508-A
2SC5508-T2-A
2SC5508-T2B-A
Quantity
50 pcs (Non reel)
3 kpcs/reel
15 kpcs/reel
Package
Flat-lead 4-pin
thin-type super
minimold (M04)
(Pb-Free)
Supplying Form
8 mm wide embossed taping
Pin 1 (Emitter), Pin 2 (Collector) face
the perforation side of the tape
Remark
To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Note
Free air.
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
totNote
T
j
T
stg
Ratings
15
3.3
1.5
35
115
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
THERMAL RESISTANCE
Parameter
Junction to Case Resistance
Junction to Ambient Resistance
Symbol
R
th j-c
R
th j-a
Ratings
150
650
Unit
°C
/W
°C
/W
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0055EJ0200 Rev.2.00
Mar 5, 2013
Page 1 of 8

2SC5508-A-FB Related Products

2SC5508-A-FB 2SC5508-A-YFB 2SC5508-T2B-A-FB 2SC5508-T2B-A-YFB 2SC5508-T2-A-FB 2SC5508-T2-A-YFB 2SC5508-T2B-A
Description RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR Rated power: 115mW Collector current Ic: 35mA Collector-emitter breakdown voltage Vce: 3.3V Transistor type: NPN NPN VCEO=3.3V IC=0.035A
Reach Compliance Code unknow unknow unknow unknow unknow unknow compliant
Base Number Matches 1 1 1 1 1 1 1
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