2SB1132 / 2SA1515S / 2SB1237
Transistors
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
−40
−32
−5
−1
−2
0.5
2
P
C
0.3
1
Tj
Tstg
+
+
Unit
V
V
V
A(DC)
A(Pulse)
∗
1
∗
2
∗
3
2SB1132
Collector power
dissipation
2SA1515S
2SB1237
Junction temperature
Storage temperature
W
150
−55
to
+150
C
C
∗
1
∗
2
∗
3
Single pulse, Pw=100ms
When mounted on a 40 40 0.7 mm ceramic board.
Printed circuit board, 1.7 mm thick, collector copper plating 100mm
2
or larger.
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
2SB1132, 2SB1237
2SA1515S
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−40
−32
−5
−
−
−
82
120
−
−
Typ.
−
−
−
−
−
−0.2
−
−
150
20
Max.
−
−
−
−0.5
−0.5
−0.5
390
390
−
30
Unit
V
V
V
µA
µA
V
−
−
MHz
pF
I
C
=
−
50µA
I
C
=
−
1mA
I
E
=
−
50µA
V
CB
=
−
20V
V
EB
=
−
4V
I
C
/I
B
=
−
500mA/
−
50mA
V
CE
=
−
3V, I
C
=
−
0.1A
V
CE
=
−
5V, I
E
=50mA,
f=30MHz
V
CB
=
−
10V, I
E
=0A,
f=1MHz
Conditions
∗
∗
Transition frequency
Output capacitance
∗
Measured using pulse current.
Packaging specifications and h
FE
Package
Code
Type
2SB1132
2SA1515S
2SB1237
h
FE
PQR
QR
PQR
−
−
−
Basic ordering unit (pieces)
T100
1000
Taping
TP
5000
−
TU2
2500
−
−
h
FE
values are classified as follows :
Item
h
FE
P
82 to 180
Q
120 to 270
R
180 to 390
Rev.B
2/4
2SB1132 / 2SA1515S / 2SB1237
Transistors
Electrical characteristics curves
-500
COLLECTOR CURRENT : I
C
(mA)
-200
-100
-50
-20
-10
-5
-2
-1
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
BASE TO EMITTER VOLTAGE : V
BE
(V)
Ta
=
100 C
25 C
−
55 C
COLLECTOR CURRENT : I
C
(mA)
V
CE
=
−
6V
−500
−300
−1.5
DC CURRENT GAIN : h
FE
−3.0
−3.5
−4.0
−400 −4.5
−5.0
−2.5
Ta=25 C
−2.0
1000
Ta=25 C
500
V
CE
= −3V
−1V
200
−200
−1.0
−100
−0.5
100
0
0
−0.4
−0.8
−1.2
I
B
=0mA
−1.6
−2.0
50
−1
−2
−5 −10 −20
−50 −100 −200 −500 −1000
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.1 Grounded emitter
propagation characteristics
Fig.2 Grounded emitter output
characteristics
Fig.3 DC current gain vs.
collector current
(Ι)
COLLECTOR SATURATION VOLTAGE : V
CE(sat )
(V)
V
CE
= −
3V
1000
DC CURRENT GAIN : h
FE
−0.5
Ta=25 C
I
C
/I
B
=10
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
−1
−1.0
Ta=25 C
−0.8
500
Ta=100 C
200
25 C
−55
C
−0.2
−0.1
−0.05
−0.6
l
C
= −500mA
−0.4
100
50
−1
−2
−0.02
−0.01
−1 −2
−0.2
l
C
= −300mA
−2
−5
−10
−20
−50 −100
−5 −10 −20
−50 −100 −200 −500−1000
−5 −10 −20
−50 −100 −200 −500 −1000 −2000
0
−1
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
BASE CURRENT : I
B
(mA)
Fig.4 DC current gain vs.
collector current
(ΙΙ)
Fig.5 Collector-emitter saturation
voltage vs. collector current
Fig.6 Collector-emitter saturation
voltage vs. base current
TRANSITION FREQUENCY : f
T
(MHz)
Ta=25 C
V
CE
= −
5V
200
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
100
COLLECTOR CURRENT : I
C
(A)
Ta=25 C
f=1MHz
I
E
=0A
50
−5
−2
=
1
Pw
s
0m
=
1
∗
P
w
ms
00
−1
−0.5
−0.2
−0.1
−0.05
−0.02
Ta=25 C
∗Single
pulse
−0.01
0
−0.2 −0.5 −1
D
C
∗
100
50
20
20
−1
−2
−5
−10
−20
−50 −100
10
−
0.5
−
1
−
2
−
5
−
10
−
20
−2
−5 −10 −20
−50
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.7 Gain bandwidth product
vs. emitter current
Fig.8 Collector output capacitance
vs.collector-base voltage
Fig.9 Safe operation area
(2SB1132)
Rev.B
3/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
Energy Infrastructure?
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