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BAV70_08

Description
0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size72KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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BAV70_08 Overview

0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE

BAV70_08 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureCOMMON CATHODE, 2 ELEMENTS
Diode component materialssilicon
Maximum power consumption limit0.2500 W
Diode typeSignal diode
Maximum reverse recovery time0.0060 us
Maximum average forward current0.2000 A
BAV70
DUAL SURFACE MOUNT SWITCHING DIODE
Features
Fast Switching Speed
Surface Mount Package Ideally Suited for Automated Insertion
For General Purpose Switching Applications
High Conductance
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
SOT-23
Case: SOT-23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Polarity: See Diagram
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.008 grams (approximate)
TOP VIEW
TOP VIEW
Internal Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FRM
@ t = 1.0μs
@ t = 1.0s
I
FSM
Value
100
75
53
300
150
450
2.0
1.0
Unit
V
V
V
mA
mA
mA
A
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
350
357
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
F
Min
75
Max
0.715
0.855
1.0
1.25
2.5
50
30
25
2.0
4.0
Unit
V
V
μA
μA
μA
nA
pF
ns
Test Condition
I
R
= 2.5μA
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
V
R
= 75V
V
R
= 75V, T
J
= 150°C
V
R
= 25V, T
J
= 150°C
V
R
= 20V
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
Notes:
1
2.
3.
4.
I
R
C
T
t
rr
Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Short duration pulse test used to minimize self-heating effect.
No purposefully added lead. Halogen and Antimony Free.
Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
BAV70
Document number: DS12006 Rev. 17 - 2
1 of 3
www.diodes.com
May 2008
© Diodes Incorporated

BAV70_08 Related Products

BAV70_08 BAV70
Description 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
Number of terminals 3 3
Number of components 2 2
state TRANSFERRED TRANSFERRED
packaging shape Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
Terminal location pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy
structure COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials silicon silicon
Maximum power consumption limit 0.2500 W 0.2500 W
Diode type Signal diode Signal diode
Maximum reverse recovery time 0.0060 us 0.0060 us
Maximum average forward current 0.2000 A 0.2000 A

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