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DF005M_2

Description
1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size70KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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DF005M_2 Overview

1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

DF005M_2 Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Minimum breakdown voltage200 V
Maximum average input current1 A
Processing package descriptionPLASTIC, DF, 4 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeIN-LINE
Terminal formTHROUGH-HOLE
terminal coatingNOT SPECIFIED
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Phase1
Maximum repetitive peak reverse voltage200 V
Maximum non-repetitive peak forward current50 A
DF005M - DF10M
1.0A GLASS PASSIVATED BRIDGE RECTIFIERS
Features
Glass Passivated Die Construction
Low Forward Voltage Drop, High Current Capability
Surge Overload Rating to 50A Peak
Designed for Printed Circuit Board Applications
UL Listed Under Recognized Component Index, File
Number E94661
Lead Free Finish, RoHS Compliant (Date Code 0532+)
(Note 3)
C
Dim
A
DF-M
Min
7.40
6.20
0.22
1.27
7.60
3.81
8.13
2.40
5.00
0.46
Max
7.90
6.50
0.30
2.03
8.90
4.69
8.51
3.40
5.20
0.58
B A
E
B
C
D
Mechanical Data
Case: DF-M
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Tin. Solder Plated Leads,
Solderable per MIL-STD-202, Method 208
Polarity: As Marked on Case
Marking Information: Type Number, See Page 3
Weight: 0.38 grams (approximate)
H
J
L
K
D
G
E
G
H
J
K
L
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current, 8.3 ms
Single Half Sine-Wave Superimposed on Rated Load
Forward Voltage (per element)
Peak Reverse Current
at Rated DC Blocking Voltage (per element)
I t Rating for Fusing (t<8.3ms)
Typical Total Capacitance per element
Typical Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
2
@T
A
= 25°C unless otherwise specified
Symbol
V
RMM
V
RWM
V
R
V
RMS
@ T
A
= 40°C
I
O
I
FSM
@ I
F
= 1.0 A
@ T
A
= 25°C
@ T
A
= 125°C
V
FM
I
RM
It
(Note 1)
(Note 2)
C
T
R
θ
JA
T
j
, T
STG
2
DF
005M
50
35
DF
01M
100
70
DF
02M
200
140
DF
04M
400
280
1.0
50
1.1
10
500
10.4
25
40
-65 to +150
DF
06M
600
420
DF
08M
800
580
DF
10M
1000
700
Unit
V
V
A
A
V
µA
As
pF
°C/W
°C
2
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal Resistance, junction to ambient, measured on PC board with 5.0mm
2
(0.03mm thick) land areas.
3. RοHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see
EU Directive Annex Notes 5 and 7.
DS21201 Rev. 15 - 2
1 of 3
www.diodes.com
DF005M-DF10M
© Diodes Incorporated

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