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2SB1424T100

Description
Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon,
CategoryDiscrete semiconductor    The transistor   
File Size72KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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2SB1424T100 Overview

Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon,

2SB1424T100 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)3 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)82
JESD-30 codeR-PSSO-F3
JESD-609 codee2
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN COPPER
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Base Number Matches1
2SB1424 / 2SA1585S
Transistors
Low V
CE
(
sat
)
Transistor (−20V,
−3A)
2SB1424 / 2SA1585S
Features
1) Low V
CE(sat)
.
V
CE(sat)
=
−0.2V
(Typ.)
(I
C
/I
B
=
−2A
/
−0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SD2150 / 2SC4115S.
External dimensions
(Unit : mm)
2SB1424
0.5±0.1
4.5
+0.2
−0.1
1.6±0.1
1.5±0.1
2SA1585S
4±0.2
2±0.2
3±0.2
4.0
±0.3
2.5
+0.2
−0.1
(15Min.)
(1)
(2)
(3)
0.4±0.1
1.5±0.1
1.0±0.2
0.4
+0.1
−0.05
0.45
+0.15
−0.05
Structure
Epitaxial planar type
PNP silicon transistor
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
3Min.
5
2.5
+0.4
−0.1
0.5
+0.15
0.45
−0.05
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
(1) (2) (3)
Abbreviated symbol: AE
Denotes h
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
FE
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Limits
−20
−20
−6
−3
−2
−5
0.5
0.4
150
−55
to 150
Unit
V
V
V
A
A(Pulse)
W
2SB1424
Collector current
2SA1585S
Collector power
dissipation
2SB1424
2SA1585S
P
C
Tj
Tstg
Junction temperature
Storage temperature
°C
°C
Single pulse Pw=10ms
Rev.A
1/3

2SB1424T100 Related Products

2SB1424T100 2SA1585STP
Description Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon
Is it Rohs certified? conform to conform to
package instruction SMALL OUTLINE, R-PSSO-F3 IN-LINE, R-PSIP-T3
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Maximum collector current (IC) 3 A 2 A
Collector-emitter maximum voltage 20 V 20 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 82 82
JESD-30 code R-PSSO-F3 R-PSIP-T3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal form FLAT THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 10 NOT SPECIFIED
Transistor component materials SILICON SILICON
Base Number Matches 1 1

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