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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3814
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3814 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3814
2SK3814-Z
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
FEATURES
•
Super low on-state resistance
R
DS(on)1
= 8.7 mΩ MAX. (V
GS
= 10 V, I
D
= 30 A)
R
DS(on)2
= 10.5 mΩ MAX. (V
GS
= 4.5 V, I
D
= 30 A)
•
Low C
iss
: C
iss
= 5450 pF TYP.
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
60
±20
±60
±240
84
1.0
150
−55
to +150
102
32
102
V
(TO-252)
V
A
A
W
W
°C
°C
mJ
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Energy
Note2
Note3
Note3
E
AS
I
AR
E
AR
Repetitive Avalanche Current
Repetitive Avalanche Energy
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 30 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V, L = 100
μ
H
3.
T
ch(peak)
≤
150°C, R
G
= 25
Ω
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16740EJ2V0DS00 (2nd edition)
Date Published August 2006 NS CP(K)
Printed in Japan
2004
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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