Power Transistor Arrays
PUA3121
(PU3121)
Silicon NPN triple diffusion planar type darlington
For power amplification
■
Features
•
Built-in zener diode (30 V) between collector and base
•
Small variation in withstand pressure
•
Large energy handling capability
•
High-speed switching
•
NPN 3 elements
20.2
±0.3
Unit: mm
4.0
±0.2
M
ain
Di
sc te
on na
tin nc
ue e/
d
9.5
±0.2
1.65
±0.2
8.0
±0.2
Solder Dip
5.3
±0.5
4.4
±0.5
0.8
±0.25
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
stg
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Symbol
V
CEO
I
CBO
I
EBO
h
FE1
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
/D
h
FE2 *1
ce
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
V
BE(sat)
f
T
t
on
t
f
Transition frequency
Turn-on time
Storage time
Fall time
t
stg
Energy handling capability
*2
E
s/b
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
*2: E
s/b
test circuit
X
Mercury relay
Rank
Free
P
Q
L
h
FE
1 000 to 10 000 2 000 to 10 000 1 000 to 5 000
Y
R
BE
Z
d
pla inc
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Rating
30±5
30±5
5
2
4
Unit
V
V
V
A
A
0.5
±0.15
7
×
2.57 = 17.78
±0.25
C 1.5
±0.5
■
Absolute Maximum Ratings
T
C
=
25°C
0.5
±0.15
1.0
±0.25
2.54
±0.2
15
W
2.4
1: Emitter
2: Base
3: Collector
4: Base
1 2 3 4 5 6 7 8
5: Collector
6: Base
7: Collector
8: Emitter
SIP8-A1 Package
150
°C
°C
−55
to
+150
Conditions
Min
25
Typ
Max
35
Unit
V
µA
V
V
I
C
=
5 mA, I
B
=
0
ue
V
CB
=
25 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
100
2
tin
mA
on
isc
V
CE
=
4 V, I
C
=
1 A
V
CE
=
4 V, I
C
=
2 A
I
C
=
2 A, I
B
=
8 mA
I
C
=
2 A, I
B
=
8 mA
I
C
=
2 A
1 000
1 000
10 000
2.5
2.5
Ma
int
en
an
V
CE
=
10 V, I
C
=
0.5 A, f
=
1 MHz
I
B1
=
8 mA, I
B2
= −8
mA
V
CC
=
20 V
20
MHz
µs
µs
µs
0.4
3.0
1.0
I
C
=
1.45 A, L
=
100 mH, R
BE
=
100
Ω
100
mJ
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004
SJK00011AED
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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–
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–
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