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PU4118

Description
Power Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIL, 10 PIN
CategoryDiscrete semiconductor    The transistor   
File Size199KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric View All

PU4118 Overview

Power Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIL, 10 PIN

PU4118 Parametric

Parameter NameAttribute value
MakerPanasonic
package instructionIN-LINE, R-PSIP-T10
Contacts10
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage150 V
ConfigurationCOMMON EMITTER, 4 ELEMENTS
Minimum DC current gain (hFE)500
JESD-30 codeR-PSIP-T10
Number of components4
Number of terminals10
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)25 MHz
Power Transistor Arrays
PUB4118
(PU4118)
Silicon NPN triple diffusion planar type
For power amplification and switching
Features
High forward current transfer ratio h
FE
Satisfactory linearity of forward current transfer ratio h
FE
NPN 4 elements
9.5
±0.2
8.0
±0.2
Unit: mm
25.3
±0.2
4.0
±0.2
M
ain
Di
sc te
on na
tin nc
ue e/
d
1.65
±0.2
Solder Dip
5.3
±0.5
4.4
±0.5
0.8
±0.25
0.5
±0.15
1.0
±0.25
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
I
CP
I
B
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Base current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
stg
Electrical Characteristics
T
C
=
25°C
±
3°C
tin
Parameter
Symbol
V
CEO
I
CBO
I
EBO
h
FE
f
T
on
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
an
Forward current transfer ratio
Ma
int
en
Collector-emitter saturation voltage
Transition frequency
V
CE(sat)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Internal Connection
3
2
1
4
5
6
7
8
10
9
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Rating
200
150
6
1
Unit
V
V
2.54
±0.2
0.5
±0.15
9
×
2.54 = 22.86
±0.25
C 1.5
±0.5
Absolute Maximum Ratings
T
C
=
25°C
V
A
2.5
0.1
15
A
A
1: Emitter
2: Base
3: Collector
4: Base
5: Collector
1 2 3 4 5 6 7 8 9 10
6: Base
7: Collector
8: Base
9: Collector
10: Emitter
SIP10-A1 Package
W
3.5
150
°C
°C
−55
to
+150
ue
Conditions
Min
150
Typ
Max
Unit
V
µA
µA
V
I
C
=
25 mA, I
B
=
0
V
EB
=
6 V, I
C
=
0
/D
isc
V
CB
=
200 V, I
E
=
0
100
100
ce
V
CE
=
4 V, I
C
=
0.2 A
500
2 000
1.0
I
C
=
0.5 A, I
B
=
0.02 A
V
CE
=
4 V, I
C
=
0.1 A, f
=
10 MHz
25
MHz
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004
SJK00008AED
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