EEWORLDEEWORLDEEWORLD

Part Number

Search

2SK3900-ZP-AZ

Description
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,82A I(D),TO-263AB
CategoryDiscrete semiconductor    The transistor   
File Size152KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric View All

2SK3900-ZP-AZ Overview

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,82A I(D),TO-263AB

2SK3900-ZP-AZ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompli
ConfigurationSingle
Maximum drain current (Abs) (ID)82 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)104 W
surface mountYES
Base Number Matches1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3900
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3900 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3900-ZP
PACKAGE
TO-263 (MP-25ZP)
FEATURES
Super low on-state resistance
R
DS(on)1
= 8.0 mΩ MAX. (V
GS
= 10 V, I
D
= 41 A)
R
DS(on)2
= 10 mΩ MAX. (V
GS
= 4.5 V, I
D
= 41 A)
Low C
iss
: C
iss
= 3500 pF TYP.
Built-in gate protection diode
(TO-263)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
60
±20
±82
±246
104
1.5
150
−55
to +150
141
37.5
141
V
V
A
A
W
W
°C
°C
mJ
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Energy
Note2
Note3
Note3
E
AS
I
AR
E
AR
Repetitive Avalanche Current
Repetitive Avalanche Energy
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= 30 V, R
G
= 25
Ω,
V
GS
= 20
0 V, L = 100
µ
H
3.
R
G
= 25
Ω,
T
ch(peak)
150°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17175EJ1V0DS00 (1st edition)
Date Published May 2004 NS CP(K)
Printed in Japan
2004
Please recommend domestic automotive grade components
RTRT There is currently a demand for domestic automotive-grade components Including but not limited to diodes, transistors, MOSFET, LDO, DCDC If anyone is familiar with this kind of product, please re...
se7ens Discrete Device
Misunderstandings about Lightning and Lightning Protection
Abstract: This paper explains the causes of lightning formation, the process of its generation, and the methods of lightning protection, so as to correctly select lightning protection devices. Keyword...
zbz0529 PCB Design
A simple debugging problem on ARM
Why can't I add the .inc file to the project when debugging a program with ADS1.2 if the main function is main.c? There are many errors when debugging the program. Please give me some advice...
dongwukan ARM Technology
Is this a recent request for the event?
[i=s]This post was last edited by exiao on 2014-6-7 07:23[/i] [p=18, null, left][color=rgb(255, 0, 0)]1. A user can only upload 10 design documents per day; the design plan must be designed and upload...
exiao Analogue and Mixed Signal
Where is the “hotness” of LED?
Where is the “hotness” of LED?...
雪山飞狐 LED Zone

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1753  789  929  323  1246  36  16  19  7  26 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号