Transys
Electronics
L I M I T E D
TO-92S Plastic-Encapsulated Transistors
2SA821S
TRANSISTOR (PNP)
TO-92S
1. EMITTER
FEATURES
2. COLLECTOR
Power dissipation
P
D
: 0.25
W (Tamb=25℃)
3. BASE
Collector current
I
CM
: -0.03 A
Collector-base voltage
V
(BR)CBO
: -210 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE
V
CEsat
123
unless otherwise specified)
Test
conditions
MIN
-210
-210
-5
-1
-1
56
270
-0.6
30
V
MHz
TYP
MAX
UNIT
V
V
V
µA
µA
Ic= -50µA , I
E
=0
I
C
= -0.1 mA , I
B
=0
I
E
= -50µA, I
C
=0
V
CB
=-150V, I
E
=0
V
EB
= -4.5 V ,
I
C
=0
V
CE
=-3 V, I
C
= -5mA
I
C
= -2mA, I
B
= -0.2mA
V
CE
=-5V, I
C
= -2mA
f
T
C
ob
Output capacitance
V
CE
=-5V, I
E
=0,f=1 MHz
12
pF
CLASSIFICATION OF
h
FE
Rank
Range
N
56-120
P
82-180
Q
120-270
Wireless Connectivity
京公网安备 11010802033920号
EEWORLD
