2SB1306T103/Q datasheet, PDF - EEWORLD Datasheet

2SB1306T103/Q: DescriptionPower Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, Plastic/Epoxy, 3 Pin, TO-92L, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size101KB，2 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/

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2SB1306T103/Q Overview

Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, Plastic/Epoxy, 3 Pin, TO-92L, 3 PIN

Parameter Name	Attribute value
Parts packaging code	TO-92L
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	120 MHz
VCEsat-Max	1 V
Base Number Matches	1

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