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2SA1727TL

Description
Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, CPT3, SC-63, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size240KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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2SA1727TL Overview

Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, CPT3, SC-63, 3 PIN

2SA1727TL Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSC-63
package instructionCPT3, SC-63, 3 PIN
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)82
JESD-30 codeR-PSSO-G2
JESD-609 codee2
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN COPPER
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)12 MHz
Base Number Matches1
2SA1812 / 2SA1727 / 2SA1776
Transistors
High-voltage Switching Transistor
( 400V, 0.5A)
2SA1812 / 2SA1727 / 2SA1776
Features
1) High breakdown voltage, BV
CEO
= 400V.
2) Low saturation voltage, typically V
CE (sat)
= 0.3V at I
C
/ I
B
= 100mA / 10mA.
3) High switching speed, typically tf : 1 s at I
C
= 100mA.
4) Wide SOA (safe operating area).
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SA1812
Collector power
dissipation
2SA1727
2SA1776
Junction temperature
Storage temperature
Tj
Tstg
P
C
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
400
400
7
0.5
1.0
0.5
2
1
10
1
150
55 to
+
150
Unit
V
V
V
A (DC)
A (Pulse)
W
W
W
W (Tc 25
°C
)
W
1
2
3
°C
°C
1 Single pulse 2 When mounted on a 40 40 0.7mm ceramic board.
3 When t = 1.7mm and the foil collector area on the PC board is 1cm
2
or greater.
Packaging specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
Denotes
h
FE
2SA1812
MPT3
PQ
AJ
T100
3000
2SA1727
CPT3
PQ
TL
3000
2SA1776
ATV
PQ
TV2
2500
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current tranfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Cob
t
on
t
stg
t
f
12
18
0.6
2.7
1
82
150
Min.
400
400
7
10
10
270
1
1.2
Typ.
Max.
Unit
V
V
V
A
A
V
V
MHz
pF
s
s
s
I
C
I
C
I
E
V
CB
V
EB
V
CE
I
C
/I
B
I
C
/I
B
V
CB
V
CE
50 A
1mA
50 A
400V
6V
5V , I
C
50mA
100mA / 10mA
100mA / 10mA
5V , I
E
10V , I
E
50mA , f
0A , f
5MHz
1MHz
Conditions
I
C
100mA, R
L
1.5k
I
B1
I
B2
10mA
V
CC
to
150V
Rev.A
1/3

2SA1727TL Related Products

2SA1727TL 2SA1812T100 2SA1776TV2
Description Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, CPT3, SC-63, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
package instruction CPT3, SC-63, 3 PIN SMALL OUTLINE, R-PSSO-F3 IN-LINE, R-PSIP-T3
Reach Compliance Code _compli compli compli
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 400 V 400 V 400 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 82 56 82
JESD-30 code R-PSSO-G2 R-PSSO-F3 R-PSIP-T3
JESD-609 code e2 e2 e1
Number of components 1 1 1
Number of terminals 2 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES NO
Terminal surface TIN COPPER TIN COPPER TIN SILVER COPPER
Terminal form GULL WING FLAT THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 10 10 10
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
Humidity sensitivity level 1 1 -
Maximum operating temperature 150 °C - 150 °C
Nominal transition frequency (fT) 12 MHz - 12 MHz
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