2SA1812 / 2SA1727 / 2SA1776
Transistors
High-voltage Switching Transistor
( 400V, 0.5A)
2SA1812 / 2SA1727 / 2SA1776
Features
1) High breakdown voltage, BV
CEO
= 400V.
2) Low saturation voltage, typically V
CE (sat)
= 0.3V at I
C
/ I
B
= 100mA / 10mA.
3) High switching speed, typically tf : 1 s at I
C
= 100mA.
4) Wide SOA (safe operating area).
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SA1812
Collector power
dissipation
2SA1727
2SA1776
Junction temperature
Storage temperature
Tj
Tstg
P
C
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
400
400
7
0.5
1.0
0.5
2
1
10
1
150
55 to
+
150
Unit
V
V
V
A (DC)
A (Pulse)
W
W
W
W (Tc 25
°C
)
W
1
2
3
°C
°C
1 Single pulse 2 When mounted on a 40 40 0.7mm ceramic board.
3 When t = 1.7mm and the foil collector area on the PC board is 1cm
2
or greater.
Packaging specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
Denotes
h
FE
2SA1812
MPT3
PQ
AJ
T100
3000
2SA1727
CPT3
PQ
TL
3000
2SA1776
ATV
PQ
TV2
2500
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current tranfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Cob
t
on
t
stg
t
f
12
18
0.6
2.7
1
82
150
Min.
400
400
7
10
10
270
1
1.2
Typ.
Max.
Unit
V
V
V
A
A
V
V
MHz
pF
s
s
s
I
C
I
C
I
E
V
CB
V
EB
V
CE
I
C
/I
B
I
C
/I
B
V
CB
V
CE
50 A
1mA
50 A
400V
6V
5V , I
C
50mA
100mA / 10mA
100mA / 10mA
5V , I
E
10V , I
E
50mA , f
0A , f
5MHz
1MHz
Conditions
I
C
100mA, R
L
1.5k
I
B1
I
B2
10mA
V
CC
to
150V
Rev.A
1/3
2SA1812 / 2SA1727 / 2SA1776
Transistors
Electrical characteristic curves
-
1
0mA
A
-0.5
COLLECTOR CURRENT : l
C
(A)
-
-
-0.4
-
60
A
-
40m
-0.2
-0.1
-0.05
-0.02
-0.01
0
°
C
DC CURRENT GAIN : h
FE
-
80
mA
COLLECTOR CURRENT : l
C
(A)
-2
0
A
A
A
mA
0m
40m
0m
100
16
-
1
12
-
mA
-1
-0.5
80
V
CE
=
-
5V
1000
500
200
100
50
20
10
5
2
1
-0.001
-0.005
-0.02 -0.1
-0.002 -0.01
-0.05
Ta=25°C
m
V
CE
=
-
10V
-0.3
0mA
l
B
=
-
2
-
5V
-0.2
Ta=10
-0.1
0
Ta=25°C
0
-2
-4
-6
-8
-10
-0.002
-0.001
-0.0005
0 -0.2-0.4-0.6-0.8-1.0-1.2-1.4-1.6 -1.8 -2.0
-
25
°C
-0.005
25
°C
-0.2-0.5 -1
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.1 Grouded emitter output
characteristics
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
Fig.2 Grounded emitter propagation
characteristics
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
BASE SATURATION VOLTAGE : V
BE (sat)
(V)
Fig.3 DC current gain
vs.
collector current ( )
1000
500
V
CE
=
-
5V
Ta=100°C
25°C
-
25°C
-10
-5
-2
-1
-0.5
-0.2
-0.1
-0.05
-0.02
-0.01
-0.001
-0.005
-0.02 -0.1
-0.002 -0.01
-0.05
l
C
/l
B
=
50
20
10
Ta=25°C
-10
-5
-2
-1
-0.5
25°C 100°C
Ta=
-
25°C
V
BE(sat)
Ta=100°C
l
C
/l
B
=10
DC CURRENT GAIN : h
FE
200
100
50
20
10
5
2
-0.2
-0.1
-0.05
-0.02
-0.01
-0.001
-0.005
-0.02 -0.1
-0.002 -0.01
-0.05
-0.2-0.5 -1
V
CE(sat)
-
25°C
25°C
1
-0.001
-0.005
-0.02 -0.1
-0.002 -0.01
-0.05
-0.2-0.5
-1
-0.2-0.5 -1
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain
vs.
collector current ( )
COLLECTOR OUTPUT CAPACITANCE : C
Ob
(pF)
Fig.5 Collector-emitter saturation
voltage vs. collector current
Fig.6 Collector-emitter saturation
voltage vs. collector current
Base-emitter saturation
voltage vs. collector current
-10
TRANSITION FREQUENCY : f
T
(MH
Z
)
1000
500
200
100
50
20
10
5
2
1
0.0005
0.002 0.01
0.001
0.005
COLLECTOR CURRENT : l
C
(A)
Ta=25°C
V
CE
=
-
5V
1000
500
200
100
50
20
10
5
2
1
-0.05-0.1 -0.2 -0.5 -1
Ta=25°C
f=1MH
Z
l
E
=0A
-5
-2
-1
-0.5
-0.2
-0.1
-0.05
Ta=25°C
l
C Max.
(Pulse )
P
W
=10ms
100ms
-0.02
(When mounted on a
-0.01
40 40 0.7mm
ceramic board.)
-0.005
Single
-0.002
-0.001
-1
nonrepetitive
pulse
0.02 0.050.1
0.2 0.5
-2 -5-10
-20 -50
-2 -5-10
-20 -50-100 -200-500
COLLECTOR CURRENT : I
E
(A)
COLLECTOR TO BASE VOLTAGE: V
CB
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.7 TRANSITION FREQUENCY
vs. EMITTER CURRENT
Fig.8 Collector output capacitance
vs. collector-base voltage
Fig.9 Safe operating area (2SA1812)
Rev.A
2/3
2SA1812 / 2SA1727 / 2SA1776
Transistors
TRANSIENT THERMAL RESISTANCE : R
th
(°C / W)
100000
10000
1000
(2)
COLLECTOR CURRENT : l
C
(A)
(1) When mounted on a
40
40 0.7mm ceramic board
(2) Unmounted
-10
-5
-2
-1
-0.5
-0.2
-0.1
-0.05
-0.02
l
C Max.
(Pulse )
DC
P
W
=10ms
100ms
TRANSIENT THERMAL RESISTANCE : R
th
(°C / W)
100000
(1) Using Infinite heat sink
(2) Unmounted
10000
1000
100
10
1
0.1
0.001 0.01
(2)
100
10
1
0.1
0.001 0.01
(1)
(1)
-0.01
-0.005
Tc=25°C
Single
-0.002
-0.001
-1 -2
nonrepetitive
pulse
0.1
1
10
100
1000
-5 -10 -20 -50-100-200 -500-1000
0.1
1
10
100
1000
PULSE WIDTH : P
W
(s)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
TIME : t (s)
Fig.10 TRANSIENT THERMAL
RESISTANCE (2SA1812)
TRANSIENT THERMAL RESISTANCE : R
th
(°C / W)
Fig.11 Safe operating area (2SA1727)
Fig.12 TRANSIENT THERMAL
RESISTANCE (2SA1727)
-10
100000
10000
1000
100
10
1
0.1
0.001 0.01
COLLECTOR CURRENT : l
C
(A)
-5
-2
-1
-0.5
-0.2
-0.1
-0.05
-0.02
l
C Max.
(Pulse )
DC
P
W
=10ms
100ms
Using printed circuit board
1.7mm thick, collector plating
1cm
2
or larger.
-0.01
-0.005
Ta=25°C
Single
-0.002
-0.001
-1 -2
nonrepetitive
pulse
-5 -10 -20 -50-100-200 -500-1000
0.1
1
10
100
1000
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
PULSE WIDTH : P
W
(s)
Fig.13 Safe operating area (2SA1776)
Fig.14 TRANSIENT THERMAL
RESISTANCE (2SA1776)
Switching characteristic measurement circuit
R
L
=1.5k
l
C
V
IN
l
B1
I
B
I
C
10%
l
B2
l
B1
R
G
l
B2
T.U.T
V
CC
_
-150V
~
l
c
P
W
P
W
_
50 s
~
<
duty cycle
=
1
90%
+V
BB
t
on
t
stg
t
f
Fig.15 Switching characteristic measurement circuit
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
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Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
Embedded System
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