EEWORLDEEWORLDEEWORLD

Part Number

Search

2SA1647-ZM-AZ

Description
TRANSISTOR,BJT,PNP,100V V(BR)CEO,5A I(C),TO-252
CategoryDiscrete semiconductor    The transistor   
File Size301KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

2SA1647-ZM-AZ Overview

TRANSISTOR,BJT,PNP,100V V(BR)CEO,5A I(C),TO-252

2SA1647-ZM-AZ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompli
Maximum collector current (IC)5 A
ConfigurationSingle
Minimum DC current gain (hFE)100
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)18 W
surface mountYES
Base Number Matches1
DATA SHEET
SILICON POWER TRANSISTOR
2SA1647,1647-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DESCRIPTION
The 2SA1647 is a mold power transistor developed for high-speed
1.5
−0.1
+0.2
PACKAGE DRAWINGS (Unit: mm)
6.5 ±0.2
5.0 ±0.2
1.6 ±0.2
switching and features a very low collector-to-emitter saturation
voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
2.3 ±0.2
0.5 ±0.1
4
5.5 ±0.2
7.0 MIN.
13.7 MIN.
+0.2
1
2
3
FEATURES
• Available for high-current control in small dimension
• Z type is a lead processed product and is deal for mounting a
hybrid IC.
• Low collector saturation voltage:
V
CE(sat)1
=
−0.3
V MAX. (I
C
=
−3.0
A)
• Fast switching speed:
t
f
= 0.4
μ
s MAX. (I
C
=
−3.0
A)
• High DC current gain and excellent linearity
1.1 ±0.2
0.5
−0.1
2.3 2.3
0.75
0.5
−0.1
+0.2
TO-251 (MP-3)
5.0 ±0.2
4.4 ±0.2
4
5.5 ±0.2
1.5
−0.1
+0.2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Base to emitter voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation (Tc = 25°C)
Total power dissipation (T
A
= 25°C)
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
Note 1
<R>
Unit
V
V
V
A
A
A
W
Note 3
6.5 ±0.2
2.3 ±0.2
0.5 ±0.1
Note
1.0 ±0.5
0.4 MIN.
0.5 TYP.
2.5 ±0.5
Ratings
−150
−100
−7.0
−5.0
−10
−2.5
18
1.0
Note 2
Note
5.6 ±0.3
9.5 ±0.5
1 2 3
0.5 ±0.1
0.5 ±0.1
2.3 ±0.3
2.3 ±0.3
0.15 ±0.15
I
B(DC)
P
T
P
T
T
j
T
stg
, 2.0
W
°C
°C
ELECTRODE CONNECTION
1.
TO-252 (MP-3Z)
2.
3.
4.
Base
Collector
Emitter
Collector Fin
150
−55
to +150
Notes 1.
PW
10 ms, Duty Cycle
50%
2.
Printing board mounted
<R>
3.
7.5 cm
2
×
0.7 mm ceramic board mounted
Note
The depth of notch at the top of the fin is
from 0 to 0.2 mm.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14839EJ5V0DS00 (5th edition)
Date Published June 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2002

2SA1647-ZM-AZ Related Products

2SA1647-ZM-AZ
Description TRANSISTOR,BJT,PNP,100V V(BR)CEO,5A I(C),TO-252
Is it Rohs certified? conform to
Reach Compliance Code compli
Maximum collector current (IC) 5 A
Configuration Single
Minimum DC current gain (hFE) 100
Maximum operating temperature 150 °C
Polarity/channel type PNP
Maximum power dissipation(Abs) 18 W
surface mount YES
Base Number Matches 1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 72  2144  2431  2560  1962  2  44  49  52  40 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号