SBR30250CT
SBR30250CTF
SBR30250CTI
SBR30250CTB
Using state-of-the-art SBR IC process technology,
the following features are made possible in a single device:
Major ratings and characteristics
Values
Characteristics
I
F(AV)
Rectangular Waveform
V
RRM
V
F
@
15A, Tj=125
O
C
Tj
(operating/storage)
30
250
0.73
-65 to 175
Units
A
V
V, typ
O
C
Device optimized for low forward voltage drop to
maximize efficiency in Power Supply applications
ELECTRICAL:
*
Low Forward Voltage Drop
*
Reliable High Temperature Operation
*
Super Barrier Design
*
Softest, fast switching capability
* 175
O
C
Operating Junction Temperature
MECHANICAL:
*
Molded Plastic TO-220AB, TO-262, TO-263, and
ITO-220 packages
Case Styles
SBR30250CT
SBR30250CTF
SBR30250CTI
SBR30250CTB
2
1
Anode
Common
Cathode
2
3
Anode
Anode
2
3
Anode
Anode
2
Anode
1
Common
Cathode
1
Common
Cathode
3
Anode
1
Common
Cathode
3
Anode
TO-220AB
ITO-220
TO-262
TO-263
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Version 2.0 - April 2006
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SBR30250CT
SBR30250CTF
SBR30250CTI
SBR30250CTB
Maximum Ratings and Electrical Characteristics
(at 25
O
C unless otherwise specified)
SYMBOL
DC Blocking Voltage
Working Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
(Rated V
R
-20Khz Square Wave) - 50% duty
cycle
Peak Forward Surge Current - 1/2 60hz
Peak Repetitive Reverse Surge Current
(2uS-1Khz)
Instantaneous Forward Voltage (per leg)
I
F
= 15A; T
J
= 25
O
C
I
F
= 15A; T
J
= 125
O
C
Maximum Instantaneous Reverse Current at
Rated V
RM
T
J
= 25
O
C
T
J
= 125
O
C
Maximum Rate of Voltage Change
(at Rated V
R
)
Maximum Thermal Resistance JC (per leg)
Package = TO-220AB, TO-262, & TO-263
Package = ITO-220
Operating and Storage Junction Temperature
NOTE: Dice are available for customer applications.
* Pulse width < 300 uS, Duty cycle < 2%
UNITS
250
Volts
V
RM
V
RWM
V
RRM
I
O
30
Amps
I
FSM
I
RRM
200
2
Amps
Amps
V
F
Typ
---
---
Max
1.00
0.90
Volts
I
R
*
Typ
---
---
10,000
Max
100
10
uA
mA
V/uS
dv/dt
Rθ
JC
T
J
2
4
-65 to +175
O
C/W
O
C
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Version 2.0 - April 2006
2
SBR30250CT
SBR30250CTF
SBR30250CTI
SBR30250CTB
10
If, Instantaneous Forward Current (Amps)
Tj=175C
100
Ir, Reverse Current (mA)
1
Tj=125C
10
0.1
Tj=175C
Tj=75C
0.01
Tj=25C
1
Tj=125C
Tj=75C
Tj=25C
0.001
0.0001
0
50
100
150
200
250
300
Vr, Reverse Voltage (Volts)
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Vf, Instantaneous Forward Voltage (Volts)
Figure 1: Typical Reverse Current
Figure 2: Typical Forward Voltage
15
If, Average Forward Current (Amps)
10
5
0
0
25
50
75
100
125
150
175
Tc, Case Temp (C)
Figure 3: Current Derating, Case
APD SEMICONDUCTOR reserves the right to make changes without further notice to any products herein. APD SEMICONDUCTOR makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does APD SEMICONDUCTOR assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APD SEMICONDUCTOR data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APD SEMICONDUCTOR does not convey any license
under its patent rights nor the rights of others. APD SEMICONDUCTOR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the APD SEMICONDUCTOR product could create a situation where personal injury or death may occur. Should Buyer
purchase or use APD SEMICONDUCTOR products for any such unintended or unauthorized application, Buyer shall indemnify and hold APD SEMICONDUCTOR and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized use, even if such claim alleges that APD SEMICONDUCTOR was negligent regarding the design or manufacture of the part..
1 Lagoon Drive, Suite 410, Redwood City, CA 94065, USA
Ph: 650 508 8896 FAX: 650 508 8865
Homepage: www.apdsemi.com
email: info@apdsemi.com
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Automotive Electronics
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