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DLPT05

Description
300 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size81KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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DLPT05 Overview

300 W, UNIDIRECTIONAL, SILICON, TVS DIODE

DLPT05 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components1
Minimum breakdown voltage6 V
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipAVALANCHE
structuresingle
Diode component materialssilicon
polarityunidirectional
Diode typeTRANS voltage SUPPRESSOR diode
shutdown voltage5 V
Maximum non-repetitive peak speed power300 W
DLPT05
SURFACE MOUNT DATALINE PROTECTION DEVICE
Features
300 Watts Peak Pulse Power (tp = 8x20μs)
Transient Protection for data line to IEC61000-4-2 level 4
(ESD), 8kV HBM
Contact: Discharge –
±30kV
Air: Discharge –
±30kV
IEC 61000-4-4 (EFT)
Low Leakage Current
Surface Mount Package Ideally Suited for Automated Insertion
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 4 and 5)
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.008 grams (approximate)
GROUND
TVS
Top View
LINE TO
BE PROTECTED
V
CC
Device Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
P
PK
V
FP
V
RRM
Value
300
2.1
75
Unit
W
V
V
Characteristic
Peak Pulse Power (tp = 8x20μs)
Peak Forward Voltage (I
PP
= 1A, tp = 8x20μs)
Diode Peak Repetitive Reverse Voltage
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
R
θ
JA
T
J
, T
STG
Value
417
-55 to +150
Unit
°C/W
°C
Electrical Characteristics
Reverse
Standoff
Voltage
V
RWM
(V)
5
Notes:
1.
2.
3.
4.
5.
@T
A
= 25°C unless otherwise specified
Test
Current
I
T
(mA)
1.0
Max. Reverse
Leakage @ V
RWM
I
R
(μA)
20
Max. Clamping
Voltage @ I
pp
= 1A
(Note 3)
V
C
(V)
9.8
Max. Peak Pulse
Current (Note 2)
(A)
17
Typical Total
Capacitance
(pF)
1.9
Breakdown Voltage
V
BR
@ I
T
Min (V)
6.0
Max (V)
V
R
= 0V, f = 1MHz from line to be protected to ground pin.
tp = 8x20μs.
Clamping voltage value is based on an 8x20μs peak pulse current (I
pp
) waveform.
No purposefully added lead. Halogen and Antimony Free.
Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured
prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
DLPT05
Document number: DS30310 Rev. 9 - 2
1 of 4
www.diodes.com
July 2008
© Diodes Incorporated

DLPT05 Related Products

DLPT05 DLPT05_08
Description 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Number of terminals 3 3
Number of components 1 1
Minimum breakdown voltage 6 V 6 V
Processing package description ROHS COMPLIANT, PLASTIC PACKAGE-3 ROHS COMPLIANT, PLASTIC PACKAGE-3
Lead-free Yes Yes
EU RoHS regulations Yes Yes
China RoHS regulations Yes Yes
state ACTIVE ACTIVE
packaging shape Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
terminal coating MATTE Tin MATTE Tin
Terminal location pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy
Craftsmanship AVALANCHE AVALANCHE
structure single single
Diode component materials silicon silicon
polarity unidirectional unidirectional
Diode type TRANS voltage SUPPRESSOR diode TRANS voltage SUPPRESSOR diode
shutdown voltage 5 V 5 V
Maximum non-repetitive peak speed power 300 W 300 W
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