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DA2JF81

Description
0.2 A, 800 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size324KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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DA2JF81 Overview

0.2 A, 800 V, SILICON, SIGNAL DIODE

DA2JF81 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionHALOGEN FREE, SMINI2-F5-B, 2 PIN
Contacts2
Manufacturer packaging codeSMINI2-F5-B
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2.5 V
JESD-30 codeR-PDSO-F2
JESD-609 codee6
Humidity sensitivity level1
Maximum non-repetitive peak forward current1 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
Maximum reverse recovery time0.045 µs
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
DA2JF81
Silicon epitaxial planar type
For high speed switching circuits
Features
Package
Code
SMini2-F5-B
Name
Pin
1: Cathode
2: Anode
Small reverse current I
R
High repetitive peak reverse voltage V
RRM
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Marking Symbol: 5A
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse surge voltage
Forward current
Non-repetitive peak forward surge current
*1, 2
Junction temperature
Storage temperature
Symbol
V
RRM
V
RSM
I
F
I
FSM
T
j
T
stg
Rating
800
800
200
1
–40 to +150
–40 to +150
Unit
V
V
mA
A
°C
°C
Note) *1: Mounted on an alumina PC board
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Symbol
V
F
I
RRM1
I
RRM2
C
t
t
rr
I
F
= 200 mA
V
RRM
= 400 V
V
RRM
= 800 V
V
R
= 0 V, f = 1 MHz
I
F
= 100 mA, I
R
= 200 mA,
I
rr
= 0.25
×
I
R
0.6
10
45
Conditions
Min
Typ
Max
2.5
1
10
Unit
V
mA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: t
rr
measurement circuit
50
50
t
rr
D.U.T.
I
F
5.5
I
R
0.25
×
I
R
Publication date: June 2010
ZKJ00029CED
1

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