EEWORLDEEWORLDEEWORLD

Part Number

Search

DB24307

Description
3 A, 30 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size328KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

DB24307 Overview

3 A, 30 V, SILICON, RECTIFIER DIODE

DB24307 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPanasonic
package instructionHALOGEN FREE AND ROHS COMPLIANT, TMINIP2-F2-B, 2 PIN
Contacts2
Manufacturer packaging codeTMINIP2-F2-B
Reach Compliance Codeunknow
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.37 V
JESD-30 codeR-PDSO-F2
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.035 µs
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
DB24307
Silicon epitaxial planar type
For rectification
Features
Low forward voltage V
F
High forward current (Average) rating : I
F(AV)
= 3 A
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
TMiniP2-F2-B
Name
Pin
1: Cathode
2: Anode
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Marking Symbol: A5
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current (Average)
Non-repetitive peak forward surge current
*
Junction temperature
Storage temperature
Symbol
V
R
V
RM
I
F(AV)
I
FSM
T
j
T
stg
Rating
30
30
3.0
50
125
–55 to +125
Unit
V
V
A
A
°C
°C
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Symbol
V
F
I
R
C
t
t
rr
I
F
= 3.0 A
V
R
= 30 V
V
R
= 10 V, f = 1 MHz
I
F
= I
R
= 100 mA, I
rr
= 10 mA,
R
L
= 100
111
35
Conditions
Min
Typ
Max
0.37
2.0
Unit
V
mA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
I
rr
= 10 mA
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
90%
t
p
= 2
µs
t
r
= 0.35 ns
δ
= 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
Pulse Generator
(PG-10N)
R
s
= 50
Publication date: October 2010
Ver. AED
1

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2878  2814  1925  1491  2178  58  57  39  31  44 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号