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DB22320

Description
1.5 A, 30 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size380KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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DB22320 Overview

1.5 A, 30 V, SILICON, RECTIFIER DIODE

DB22320 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPanasonic
package instructionR-PDSO-F2
Contacts2
Manufacturer packaging codeMINI2-F4-B
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.38 V
JESD-30 codeR-PDSO-F2
Maximum non-repetitive peak forward current30 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.016 µs
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
DB22320
Silicon epitaxial planar type
For rectification
Features
Low forward voltage V
F
and small reverse current I
R
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
Mini2-F4-B
Name
Pin
1: Cathode
2: Anode
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Marking Symbol: B5
Unit
V
V
A
A
°C
°C
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Non-repetitive peak forward surge current
*
Junction temperature
Storage temperature
Symbol
V
R
V
RRM
I
F(AV)
I
FSM
T
j
T
stg
Rating
30
30
1.5
30
125
–55 to +125
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Symbol
V
F1
V
F2
V
F3
I
R
C
t
t
rr
I
F
= 0.5 A
I
F
= 1.0 A
I
F
= 1.5 A
V
R
= 30 V
V
R
= 10 V, f = 1 MHz
I
F
= I
R
= 100 mA, I
rr
= 0.1
×
I
R
,
R
L
= 100
48
16
Conditions
Min
Typ
Max
0.38
0.42
0.46
100
µA
pF
ns
V
Unit
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
I
rr
= 10 mA
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
90%
t
p
= 2
µs
t
r
= 0.35 ns
δ
= 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
Pulse Generator
(PG-10N)
R
s
= 50
Publication date: August 2010
Ver. BED
1

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