This product complies with the RoHS Directive (EU 2002/95/EC).
FJ330301
Silicon P-channel MOS FET
For switching circuits
Overview
FJ330301 is P-channel small signal MOS FET employed small size surface
mounting package.
Package
Code
SSSMini3-F2-B
Name
Pin
1: Gate
2: Source
3: Drain
Features
Low drain-source ON resistance: R
DS(on)
typ. = 4
W
(V
GS
=
-4.0
V)
High-speed switching
Small size surface mounting package: SSSMini3-F2-B
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Marking Symbol: U1
Internal Connection
(D)
3
Packaging
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
T
ch
T
stg
Rating
-30
±12
-100
-200
100
150
–55 to +150
Unit
V
V
mA
mA
mW
°C
°C
1
(G)
2
(S)
Publication date: January 2011
Ver. CED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
FJ330301
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Short-circuit input capacitance (Common source)
Short-circuit output capacitance (Common source)
Reverse transfer capacitance (Common source)
Turn-on time
*
Turn-off time
*
Symbol
V
DSS
I
DSS
I
GSS
V
TH
R
DS(on)
Y
fs
C
iss
C
oss
C
rss
t
on
t
off
V
DD
=
-3
V, V
GS
= 0 V to
-3
V,
I
D
=
-10
mA
V
DD
=
-3
V, V
GS
=
-3
V to 0 V,
I
D
=
-10
mA
V
DS
=
-3
V, V
GS
= 0, f = 1 MHz
Conditions
I
D
=
-1
mA, V
GS
= 0
V
DS
=
-30
V, V
GS
= 0
V
GS
=
±10
V, V
DS
= 0
I
D
=
-1.0 mA,
V
DS
=
-3.0
V
I
D
=
-10
mA, V
GS
=
-2.5
V
I
D
=
-10
mA, V
GS
=
-4.0
V
I
D
=
-10
mA, V
DS
=
-3
V
20
-
0.5
-
1.0
7
4
40
12
7
3
100
100
Min
-30
-1.0
±10
-1.5
17
7
Typ
Max
Unit
V
mA
mA
V
W
W
mS
pF
pF
pF
ns
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Test circuit
V
DD
= −3
V
I
D
= −10
mA
R
L
=
300
Ω
V
OUT
D
V
IN
10%
90%
90%
10%
t
d(on)
t
r
t
d(off)
t
f
V
GS
=
0 V to
−3
V
V
IN
50
Ω
G
V
OUT
S
2
Ver. CED
This product complies with the RoHS Directive (EU 2002/95/EC).
FJ330301
FJ330301_
I
D
-V
DS
−100
I
D
V
DS
T
a
= 25°C
V
GS
=
−4.5
V
−2.5
V
−10
2
V
DS
=
−3
V
−10
FJ330301_
I
D
-V
GS
I
D
V
GS
FJ330301_
R
DS(on)
-V
GS
10
3
R
DS(on)
V
GS
−80
Drain-source ON resistance R
DS(on)
(Ω)
T
a
= 25°C
I
D
= 0.01 A
Drain current I
D
(mA)
Drain current I
D
(mA)
−60
−1
T
a
= 85°C
10
2
−40
−10
−1
25°C
10
−20
−1.5
V
−10
−2
−30°C
0
0
−
0.1
−
0.2
−
0.3
−
0.4
−
0.5
−10
−3
0
−
0.5
−1.0
−1.5
−2.0
1
0
−2
−4
−6
−8
−10
Drain-source voltage V
DS
(V)
FJ330301_
R
DS(on)
-I
D
Gate-source voltage V
GS
(V)
FJ330301_ P
D
-T
a
Gate-source voltage V
GS
(V)
Area of safe operation for the FJ330301
R
DS(on)
I
D
P
D
T
a
Safe operation area
10
2
T
a
= 25°C
120
100
−10
3
Drain-source ON resistance R
DS(on)
(Ω)
T
a
= 25°C
Glass epoxy board
(25.4 mm× 25.4 mm
×
t0.8 mm) coated with
copper foil, which has more than 300 mm
2
.
I
DP
=
−
0.2 A
Limited by
R
DS(on)
= 7
Ω
(max)
(V
GS
=
−4.0
V)
10 ms
1s
100 ms
DC
Power dissipation P
D
(mW)
10
V
GS
=
−2.5
V
−4.0
V
80
60
40
20
0
1
Drain current I
D
(mA)
0
−10
2
−10
10
−1
−10
−1
−1
−10
−10
2
40
80
120
160
−1
−2
−10
−10
−1
−1
−10
−10
2
Drain current I
D
(mA)
FJ330301_C
iss
, C
rss
, C
oss
-V
DS
Ambient temperature T
a
(°C)
FJ330301
_|
Y
fs
|
-I
D
Drain-source voltage V
DS
(V)
C
iss
, C
rss
, C
oss
V
DS
Y
fs
I
D
Short-circuit input capacitance (Common source)
Ci
ss
,
Reverse transfer capacitance (Common source)
C
rss
,
Short-circuit output capacitance (Common source)
C
oss
(pF)
25
T
a
= 25°C
1
20
15
C
iss
10
C
oss
C
rss
0
−5
−10
−15
−20
5
0
Forward transfer admittance
|
Y
fs
|
(S)
T
a
= 25°C
V
DS
=
−3
V
10
−1
10
−2
10
−3 −1
−10
−1
−10
−10
2
Drain-source voltage
V
DS
(V)
Drain current I
D
(mA)
Ver. CED
3
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semiconductors de
(1)
If any of the products or technical information described in thi
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(3) The products described in this book are intended to be used fo
equipment, measuring instruments and household appliances), o
Consult our sales staff in advance for information on the followi
–
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this book for any special application.
(4) The products and product specifications described in this book
provement. At the final stage of your design, purchasing, or u
Standards in advance to make sure that the latest specifications s
(5) When designing your equipment, comply with the range of a
(operating power supply voltage and operating environment etc
maximum rating on the transient state, such as power-on, powe
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values,
mode, possible to occur to semiconductor products. Measures o
or preventing glitch are recommended in order to prevent physic
(6) Comply with the instructions for use in order to prevent breakd
thermal stress and mechanical stress) at the time of handling, m
damp-proof packing is required, satisfy the conditions, such as s
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