EEWORLDEEWORLDEEWORLD

Part Number

Search

NAND02GR3B3AN6T

Description
256MX8 FLASH 1.8V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
Categorystorage    storage   
File Size999KB,59 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

NAND02GR3B3AN6T Overview

256MX8 FLASH 1.8V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

NAND02GR3B3AN6T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeTSOP
package instructionTSOP1, TSSOP48,.8,20
Contacts48
Reach Compliance Codenot_compliant
ECCN code3A991.B.1.A
Maximum access time35 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PDSO-G48
JESD-609 codee0
length18.4 mm
memory density2147483648 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size2K
Number of terminals48
word count268435456 words
character code256000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP48,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
page size2K words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8 V
Programming voltage1.8 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size128K
Maximum standby current0.00005 A
Maximum slew rate0.015 mA
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
width12 mm
NAND512-B, NAND01G-B NAND02G-B
NAND04G-B NAND08G-B
512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
– Up to 8 Gbit memory array
– Up to 64Mbit spare area
– Cost effective solutions for mass storage
applications
NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
SUPPLY VOLTAGE
– 1.8V device: V
DD
= 1.7 to 1.95V
– 3.0V device: V
DD
= 2.7 to 3.6V
PAGE SIZE
– x8 device: (2048 + 64 spare) Bytes
– x16 device: (1024 + 32 spare) Words
BLOCK SIZE
– x8 device: (128K + 4K spare) Bytes
– x16 device: (64K + 2K spare) Words
PAGE READ / PROGRAM
– Random access: 25µs (max)
– Sequential access: 50ns (min)
– Page program time: 300µs (typ)
COPY BACK PROGRAM MODE
– Fast page copy without external buffering
CACHE PROGRAM AND CACHE READ
MODES
– Internal Cache Register to improve the
program and read throughputs
FAST BLOCK ERASE
– Block erase time: 2ms (typ)
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’
– for simple interface with microcontroller
AUTOMATIC PAGE 0 READ AT POWER-UP
– Boot from NAND support
SERIAL NUMBER OPTION
Figure 1. Packages
TSOP48 12 x 20mm
USOP48 12 x 17 x 0.65mm
FBGA
VFBGA63 9.5 x 12 x 1mm
TFBGA63 9.5 x 12 x 1.2mm
LFBGA63 9.5 x 12 x 1.4mm
DATA PROTECTION
– Hardware and Software Block Locking
– Hardware Program/Erase locked during
Power transitions
DATA INTEGRITY
– 100,000 Program/Erase cycles
– 10 years Data Retention
RoHS COMPLIANCE
– Lead-Free Components are Compliant
with the RoHS Directive
DEVELOPMENT TOOLS
– Error Correction Code software and
hardware models
– Bad Blocks Management and Wear
Leveling algorithms
– PC Demo board with simulation software
– File System OS Native reference software
– Hardware simulation models
1/59
February 2005
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
I have a question about DMA and LCD of s3c2410. Where should nXDreq and nXDACK be connected? I found a schematic diagram but I don't understand it.
When outputting images to the LCD at the application layer, you can write: unsigned long *nPhysicalAddress = 0x30000000; (frame buffer address) Just modify the memory pointed to by nPhysicalAddress. H...
phatato Embedded System
Seeking MTK Bluetooth technical support
Everyone: Is there anyone familiar with the MT6626 chip? I am using MUC to communicate with the Bluetooth UART port. I want to increase the Bluetooth baud rate. The default baud rate of the Bluetooth ...
wangang556 RF/Wirelessly
Problems with taking screenshots under WinCE
In the following code, if I want to capture a screenshot of an area, where should I change the value? It should not be the bitmap width and height HDC hScrDC, hMemDC; //Screen and memory device descri...
朗宇科技 Embedded System
EEWORLD World Trend Frontline——Development Board Water Group Welcomes You
The most gossipy topics and the most exciting passion. EEWORLD development board exchange group - referred to as the water group welcomes you. It’s going to be full soon, it’s going to be full soon. I...
辛昕 Talking
Send a LINUX written test
1. Explain the specific meaning of the command "ls -|a|more". 2. What is pipe in LINUX? What is redirection? 3. What is the specific meaning of "GCC -g -o test.elf test.c"? 4. Briefly describe the pro...
wanghongyang Embedded System
Flyback switching power supply, no feedback winding can not carry the load
Dear experts, please help me. When +5v is fed back, +18 can't carry the load, and the voltage drops when the load is added; when +18v is fed back, +5 can't carry the load. I use EFD20, and I searched ...
xiajhua Power technology

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 732  899  594  1152  2054  15  19  12  24  42 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号